发明授权
- 专利标题： Process for fabricating connection structures
- 专利标题（中）： 制造连接结构的工艺
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申请号： US947704申请日： 1997-10-09
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公开(公告)号： US5776830A公开(公告)日： 1998-07-07
- 发明人: Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
- 申请人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-070957 19930305
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L21/283
摘要：
The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
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