公开(公告)号：US5795825A

公开(公告)日：1998-08-18

申请号：US627511

申请日：1996-04-08

Applicant: Yukiyasu Sugano ,  Junichi Sato

Inventor： Yukiyasu Sugano ,  Junichi Sato

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/465

CPC classification number: H01L21/311 ,  H01L21/76877

Abstract: A method of forming a connection layer by filling an Al-based material wherein planarization of an entire surface of a substrate is achieved. 1 Al-based material 10 is deposited and filled in concave sections 4,8 formed in a substrate 1 under a high temperature, and then the surface of the Al-base material is polished with unwoven cloth or an etching liquid. 2 In a lithography process using an alignment mark for alignment on a substrate, an Al-based material is deposited and filled in a concave section in a portion other than the alignment mark for alignment under a high temperature, and then the surface of the Al-based material is polished. 3 In a process to deposit an Al-based material on a substrate and then planarize the surface of the Al-based material by polishing, an antireflection film is deposited on the Al-based material after the Al-based material is planarized.

Abstract translation: 通过填充Al基材料形成连接层的方法，其中实现了基板的整个表面的平坦化。 + E，crc 1 + EE Al基材料10沉积并填充在高温下形成在基板1中的凹部4,8中，然后用无纺布或蚀刻来研磨Al基材料的表面 液体。 + E，crc 2 + EE在使用对准标记在基板上进行取向的光刻工艺中，Al基材料沉积并填充在除对准标记之外的部分中的凹部中，以在高温下进行取向，并且 然后抛光Al基材料的表面。 + E，crc 3 + EE在将Al基材料沉积在基板上然后通过抛光使Al基材料的表面平坦化的方法中，在Al基材料上沉积抗反射膜 材料平面化。

公开(公告)号：US5397744A

公开(公告)日：1995-03-14

申请号：US283255

申请日：1994-07-29

Applicant: Hirofumi Sumi ,  Yukiyasu Sugano

Inventor： Hirofumi Sumi ,  Yukiyasu Sugano

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/283

CPC classification number: H01L21/76859 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76843 ,  H01L2924/0002 ,  Y10S148/019

Abstract: A metallization method in which a fine interconnection hole is filled with an Al-based material and in which low resistance and excellent barrier properties may be achieved simultaneously, is proposed. The present invention resides in improvement in the barrier metal structure. (a) A stack of a TiSi.sub.2 layer and a Ti layer, formed by an modified SALICIDE method, and (b) a layer of a Ti-based material rendered amorphous are used. The TiSi.sub.2 layer is formed in a self-aligned manner by reacting the silicon substrate with the Ti layer by the interposition of e.g. a thin SiO.sub.2 layer and exhibits lower sheet resistance and dense film properties as well as excellent barriering properties. The Ti layer is stacked on the TiSi.sub.2 layer for improving wettability with respect to the layer of the Al-based material. The layer of the amorphous Ti-based material is formed by N.sub.2 ion implantation into the polycrystalline TiN layer and exhibits superior barrier properties because the crystal grain boundary functioning as the Al diffusion path is destructed. Both of these layers exhibit low sheet resistance as compared to the TiON layer used heretofore as a layer of a material exhibiting excellent barrier properties, while being superior in wettability with respect to the layer of the Al-based material, so that a highly reliable contact may be formed.

Abstract translation: 提出了一种金属化方法，其中精细互连孔填充有Al基材料并且其中可以同时实现低电阻和优异的阻挡性能。 本发明在于阻挡金属结构的改进。 （a）使用通过改性的SALICIDE法形成的TiSi 2层和Ti层的叠层，（b）呈现非晶态的Ti基材料层。 TiSi2层通过使硅衬底与Ti层反应而自对准地形成。 薄的SiO 2层，并且具有较低的薄层电阻和致密的膜性质以及优异的阻挡性能。 Ti层层叠在TiSi2层上，用于改善相对于Al基材料的层的润湿性。 由于作为Al扩散路径发挥作用的晶粒边界被破坏，因此通过N 2离子注入形成多晶TiN层并且表现出优异的阻挡特性，形成非晶Ti基材料层。 与迄今为止用作具有优异阻隔性的材料层的TiON层相比，这两层都具有低的薄层电阻，同时相对于Al基材料的层具有优异的润湿性，使得高度可靠的接触 可能形成。

公开(公告)号：US5393398A

公开(公告)日：1995-02-28

申请号：US180789

申请日：1994-01-07

Applicant: Yukiyasu Sugano

Inventor： Yukiyasu Sugano

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3447

Abstract: A magnetron sputtering apparatus comprises: a wafer holder for holding a wafer thereon; a target holder for holding a target thereon, disposed opposite to the wafer holder; and a particle interceptor for intercepting some of particles ejected from the target, disposed between the wafer holder and the target holder. The diameter of the target is not less than that of the wafer and not greater than a value 1.4 times that of the wafer. Most particles fall on the surface of the wafer at small incidence angles and only few particles impinge and accumulate on the particle interceptor, so that particles deposit in a film of a uniform thickness over the surface of the wafer and are able to fall on the bottom surfaces of contact holes formed in the wafer. In a modification, the particle interceptor is moved in a plane parallel to the surface of the wafer to distribute particles uniformly over the surface of the wafer.

Abstract translation: 磁控溅射装置包括：用于在其上保持晶片的晶片保持器; 用于在其上保持目标的目标保持器，与晶片保持器相对设置; 以及用于截取从靶上排出的一些颗粒的粒子拦截器，其设置在晶片保持器和靶保持器之间。 靶的直径不小于晶片的直径，不大于晶片直径的1.4倍。 大多数颗粒以小入射角落在晶片的表面上，只有很少的颗粒撞击并聚集在颗粒拦截器上，使得颗粒沉积在晶片表面上均匀厚度的膜上，并且能够落在底部 在晶片中形成的接触孔的表面。 在修改中，粒子拦截器在平行于晶片表面的平面内移动，以将颗粒均匀地分布在晶片的表面上。

公开(公告)号：US5283206A

公开(公告)日：1994-02-01

申请号：US894294

申请日：1992-06-04

Applicant: Yukiyasu Sugano

Inventor： Yukiyasu Sugano

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283

CPC classification number: H01L21/321 ,  Y10S148/058 ,  Y10S438/927

Abstract: A method of removing Ge particles precipitated in an Al/Ge alloy film formed over the surface of a substrate in fabricating a semiconductor device forms a Cu film over the surface of the Al/Ge alloy film in a laminate structure, subjects the laminate structure to heat treatment to make the Ge particles migrate toward the Cu film and to make the Ge particles and the Cu film interact to produce a Ge/Cu compound layer. Thus, the Ge particles precipitated in the Al/Ge alloy film are removed from the Al/Ge alloy film and, consequently, the contact resistance of the Al/Ge alloy film is reduced and the migration resistance of the Al/Ge alloy film is enhanced.

Abstract translation: 在制造半导体器件时，在形成于基板表面的Al / Ge合金膜中析出的Ge颗粒的去除方法在层压结构中在Al / Ge合金膜的表面上形成Cu膜，使层压结构体 进行热处理以使Ge颗粒向Cu膜迁移并使Ge颗粒和Cu膜相互作用以产生Ge / Cu化合物层。 因此，Al / Ge合金膜中析出的Ge颗粒从Al / Ge合金膜中除去，因此Al / Ge合金膜的接触电阻降低，Al / Ge合金膜的耐迁移性为 增强。

公开(公告)号：US06632711B2

公开(公告)日：2003-10-14

申请号：US09731905

申请日：2000-12-08

Applicant: Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

Inventor： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC: H01L2184

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

Abstract translation: 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US5290731A

公开(公告)日：1994-03-01

申请号：US848123

申请日：1992-03-09

Applicant: Yukiyasu Sugano ,  Shinji Minegishi ,  Kazuhide Koyama ,  Hirofumi Sumi

Inventor： Yukiyasu Sugano ,  Shinji Minegishi ,  Kazuhide Koyama ,  Hirofumi Sumi

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/441

CPC classification number: H01L21/76862 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

Abstract: A metallization method for improving wettability and reactivity of a titanium (Ti) based barrier metal layer with respect to an aluminum (Al) based material and simultaneously achieving high barrier properties and superior step coverage, is proposed. An operation of increasing the crystal grain size of and planarizing at least a surface region of a barrier metal layer is effected simultaneously at the time of formation of a barrier metal layer. In this manner, Al migration characteristics and reactivity on a barrier metal surface are improved so that voids are not produced when an Al-based material layer is charged into small-sized connecting hole by a process sensitive to surface morphology, such as high temperature bias sputtering. By this technique, wettability of a material layer having distinctly inferior wettability with Al, while being excellent in barrier properties, such as a TiON layer, may be improved. As a smoothing operation, bias sputtering, laser irradiation and lamp annealing are proposed. Satisfactory results have been achieved on applying these to a Ti/TiON/Ti system, a Ti/TiON system or to a Ti/TiON/TiSi.sub.2 system.

Abstract translation: 提出了一种用于改善钛（Ti）基阻挡金属层相对于铝（Al）基材料的润湿性和反应性的金属化方法，同时实现高阻挡性能和优异的台阶覆盖率。 在形成阻挡金属层时同时进行增加阻挡金属层的至少表面区域的晶粒尺寸和平坦化的操作。 以这种方式，改善了阻挡金属表面的Al迁移特性和反应性，使得当通过对表面形态敏感的方法将Al基材料层装入小尺寸连接孔时，不会产生空隙，例如高温偏差 溅射。 通过这种技术，可以提高具有优异的耐湿性的材料层与Al的润湿性，同时具有优异的阻隔性能，例如TiON层。 作为平滑化处理，提出偏置溅射，激光照射和灯退火。 在Ti / TiON / Ti体系，Ti / TiON体系或Ti / TiON / TiSi2体系中应用这些结果已经取得了令人满意的结果。

公开(公告)号：US06933185B2

公开(公告)日：2005-08-23

申请号：US10394223

申请日：2003-03-24

Applicant: Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

Inventor： Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

IPC: H01L21/263 ,  H01L21/66 ,  C30B28/02 ,  H01L21/786

CPC classification number: H01L22/12

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract translation: 对通过非晶硅膜的准分子激光退火而形成的多晶硅膜的状态进行评价。 当非晶硅膜退火以形成多晶硅膜时，线性或周期性本身就取决于退火期间施加到非晶硅的能量而形成的多晶硅膜的膜表面的空间结构。 该线性或周期性被处理为图像并且通过利用线性或周期性从图像数字地表示。 基于数值结果检查多晶硅膜的状态。

公开(公告)号：US06646711B2

公开(公告)日：2003-11-11

申请号：US09951641

申请日：2001-09-13

Applicant: Yukiyasu Sugano

Inventor： Yukiyasu Sugano

IPC: G02F113

CPC classification number: C03C15/00 ,  G02F1/1333 ,  G02F2001/133302

Abstract: The weight and thickness reduction of a display panel can be realized without reducing the substrate size and lowering the productivity. To produce a display panel, there are performed a panel producing step for manufacturing a display panel using substrates each having a predetermined wall thickness; and a chemical treatment step for immersing the display panel into a chemical solution and removing a fixed amount of the surface of the substrates by a chemical reaction so as to reduce the wall thickness, wherein in the panel producing step, the display panel is produced by forming an electroluminescence element on one substrate having a predetermined thickness, and in the chemical treatment step, the display panel is immersed into the chemical solution while the electroluminescence element is protected.

Abstract translation: 可以在不降低基板尺寸并降低生产率的情况下实现显示面板的重量和厚度减小。 为了制造显示面板，进行使用具有预定壁厚的基板来制造显示面板的面板制造步骤; 以及化学处理步骤，用于将显示面板浸入化学溶液中并通过化学反应去除固定量的基板表面以减小壁厚，其中在面板制作步骤中，显示面板由 在具有预定厚度的一个基板上形成电致发光元件，并且在化学处理步骤中，当电致发光元件被保护时，显示面板被浸入化学溶液中。

公开(公告)号：US5972786A

公开(公告)日：1999-10-26

申请号：US478910

申请日：1995-06-07

Applicant: Kazuhiro Hoshino ,  Yukiyasu Sugano

Inventor： Kazuhiro Hoshino ,  Yukiyasu Sugano

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

CPC classification number: H01L21/76843 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/28568

Abstract: A process for forming wiring over a migration preventing layer on a semiconductor substrate including forming a contact hole in a an insulation layer of the substrate and then filling the contact hole with an aluminum based alloy. A migration preventing layer is then formed, of a material which resists migration of atoms of the aluminum based alloy, over the surface of the aluminum based alloy. A wiring layer of aluminum is then formed over the migration preventing layer. In another embodiment, the contact hole may be provided with a first layer to prevent electron migration and a second layer which is a nitride of the first layer material.

Abstract translation: 一种用于在半导体衬底上的防迁移层上形成布线的工艺，包括在基板的绝缘层中形成接触孔，然后用铝基合金填充接触孔。 然后，在铝基合金的表面上形成防止铝基合金的原子迁移的材料的防迁移层。 然后在迁移防止层上形成铝的布线层。 在另一个实施例中，接触孔可以设置有防止电子迁移的第一层和作为第一层材料的氮化物的第二层。

公开(公告)号：US06693258B2

公开(公告)日：2004-02-17

申请号：US10061392

申请日：2002-02-04

Applicant: Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

Inventor： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC: H01L2976

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

Abstract translation: 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。