发明授权
- 专利标题： Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film
- 专利标题（中）： 铁电薄膜，铁电薄膜覆盖基板和铁电薄膜的制造方法
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申请号： US449701申请日： 1995-05-24
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公开(公告)号： US5811181A公开(公告)日： 1998-09-22
- 发明人: Takeshi Kijima , Sakiko Satoh , Hironori Matsunaga , Masayoshi Koba , Noboru Ohtani
- 申请人： Takeshi Kijima , Sakiko Satoh , Hironori Matsunaga , Masayoshi Koba , Noboru Ohtani
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-302133 19941206
- 主分类号： C01G49/00
- IPC分类号： C01G49/00 ; C01G29/00 ; C23C16/40 ; C23C16/56 ; H01B3/02 ; H01B3/10 ; H01B3/12 ; H01B17/60 ; H01B19/00 ; H01L21/336 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L29/788 ; H01L29/792 ; H01L41/39 ; H01L49/02 ; B32B17/00
摘要：
A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.
公开/授权文献
- US5054311A Fully automated leak testing apparatus 公开/授权日：1991-10-08
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