公开(公告)号：US08178389B2

公开(公告)日：2012-05-15

申请号：US12708124

申请日：2010-02-18

Applicant: Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

Inventor： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC: H01L21/00

CPC classification number: H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract translation: 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US20100147212A1

公开(公告)日：2010-06-17

申请号：US12708124

申请日：2010-02-18

Applicant: Masashi NAKABAYASHI ,  Tatsuo FUJIMOTO ,  Mitsuru SAWAMURA ,  Noboru OHTANI

Inventor： Masashi NAKABAYASHI ,  Tatsuo FUJIMOTO ,  Mitsuru SAWAMURA ,  Noboru OHTANI

IPC: C30B23/00

CPC classification number: H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract translation: 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US20100080956A1

公开(公告)日：2010-04-01

申请号：US12592747

申请日：2009-12-01

Applicant: Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

Inventor： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC: B32B5/00

CPC classification number: C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B33/02 ,  Y10T428/24355

Abstract: The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

Abstract translation: 本发明提供一种用于制造具有优异特性的半导体器件的低电阻率碳化硅单晶晶片。 低电阻率碳化硅单晶晶片的比体积电阻为0.001＆OHgr; cm至0.012＆OHgr。cm，90％或更大的整个晶片表面积由粗糙度（Ra）为1.0的SiC单晶表面覆盖 nm以下。

公开(公告)号：US20080302981A1

公开(公告)日：2008-12-11

申请号：US12155404

申请日：2008-06-03

Applicant: Takatoshi Matsumura ,  Masahiko Ishikawa ,  Yoshitaka Masuda ,  Noboru Ohtani ,  Yoshiya Kimura ,  Yoshiyuki Masuda ,  Noriyuki Kato

Inventor： Takatoshi Matsumura ,  Masahiko Ishikawa ,  Yoshitaka Masuda ,  Noboru Ohtani ,  Yoshiya Kimura ,  Yoshiyuki Masuda ,  Noriyuki Kato

IPC: G02B5/20

CPC classification number: B32B15/00 ,  G02B2207/121 ,  H01J2211/446 ,  H01J2329/869 ,  H05K9/0096

Abstract: The present invention provides a light-transmitting electromagnetic wave-shielding material for use in displays or in-vehicle panels each having a polarizing plate or a retardation plate, wherein the light-transmitting electromagnetic wave-shielding material undergoes no generation of light interference fringes and is satisfactory in visibility even through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability. By using unstretched light-transmitting organic polymer materials low in molecular orientation or small in molecular orientation unevenness as the base substrate of an electromagnetic wave-shielding layer, the light-transmitting electromagnetic wave-shielding material excellent in light interference fringe prevention capability can be obtained.

Abstract translation: 本发明提供一种用于显示器或车载面板中的透光电磁波屏蔽材料，其具有偏振板或延迟板，其中透光电磁波屏蔽材料不产生光干涉条纹， 即使通过太阳眼镜，护目镜，防眩光面板或具有偏振能力的防眩光窗口材料也能令人满意。 通过使用分子取向性低，分子取向不均匀小的未拉伸透光性有机聚合物材料作为电磁波屏蔽层的基底，可以得到光干涉条纹防止能力优异的透光电磁波屏蔽材料 。

公开(公告)号：US20050160965A1

公开(公告)日：2005-07-28

申请号：US10509923

申请日：2003-03-31

Applicant: Noboru Ohtani ,  Masakazu Katsuno ,  Tatsuo Fujimoto

Inventor： Noboru Ohtani ,  Masakazu Katsuno ,  Tatsuo Fujimoto

IPC: C30B23/00 ,  C30B25/00 ,  C30B25/20 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B1/00

CPC classification number: C30B25/20 ,  C30B23/00 ,  C30B23/005 ,  C30B25/00 ,  C30B29/36

Abstract: The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.

Abstract translation: 本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。 由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向 从<0001>方向到[1-100]方向从-45度以上到45度以下。 通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。 根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

公开(公告)号：US06305910B1

公开(公告)日：2001-10-23

申请号：US09538504

申请日：2000-03-30

Applicant: Atsuyuki Miura ,  Yoshihiro Naito ,  Noboru Ohtani ,  Koichi Nakayama

Inventor： Atsuyuki Miura ,  Yoshihiro Naito ,  Noboru Ohtani ,  Koichi Nakayama

IPC: F04B300

CPC classification number: F01C21/007 ,  F04C23/001 ,  F05C2251/042

Abstract: A multi-stage pump device includes a plurality of pump devices, each of the pump devices having a pump portion feeding working fluid under pressure, and a connecting portion provided between at least two of the pump devices, through which working fluid pumped by the respective pump devices passes. The connecting portion is expandable in a direction of the length thereof and is provided with a sealing structure to prevent a leakage of the working fluid. The connecting portion may be two telescopically arranged pipes or a bellows.

Abstract translation: 多级泵装置包括多个泵装置，每个泵装置具有在压力下供给工作流体的泵部分和设置在至少两个泵装置之间的连接部分，工作流体由相应的泵 泵装置通过。 连接部分可在其长度方向上扩张，并且设置有密封结构以防止工作流体的泄漏。 连接部分可以是两个可伸缩布置的管或波纹管。

公开(公告)号：US5907470A

公开(公告)日：1999-05-25

申请号：US870629

申请日：1997-06-06

Applicant: Ryusuke Kita ,  Yoshiyuki Masuda ,  Yoshiyuki Matsu ,  Noboru Ohtani ,  Seiki Yano

Inventor： Ryusuke Kita ,  Yoshiyuki Masuda ,  Yoshiyuki Matsu ,  Noboru Ohtani ,  Seiki Yano

IPC: C01G23/00 ,  C23C14/08 ,  C23C14/34 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01G4/06

CPC classification number: H01G4/33 ,  H01G4/1227 ,  H01L28/40

Abstract: The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

Abstract translation: 本发明提供一种电介质薄膜电容器元件，其中可以抑制泄漏电流随着时间的推移而在高温下通电并且具有优异的绝缘质量和可靠性及其制造方法。 电介质薄膜电容器元件通过在基板上依次形成下电极，电介质薄膜和上电极而构成，其特征在于，所述电介质薄膜由氧化物材料 由至少钛和锶组成并含有铒。

公开(公告)号：US5593495A

公开(公告)日：1997-01-14

申请号：US435135

申请日：1995-05-05

Applicant: Yoshiyuki Masuda ,  Ryusuke Kita ,  Hisako Arai ,  Noboru Ohtani ,  Masayoshi Koba

Inventor： Yoshiyuki Masuda ,  Ryusuke Kita ,  Hisako Arai ,  Noboru Ohtani ,  Masayoshi Koba

IPC: C01B13/14 ,  C01G21/00 ,  C01G23/00 ,  C23C18/12 ,  C30B5/00 ,  H01B3/00 ,  H01L37/02 ,  H01L41/39 ,  C30B1/10

CPC classification number: C23C18/1225 ,  C23C18/1216 ,  C23C18/1254 ,  C30B29/32 ,  C30B5/00

Abstract: In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Abstract translation: 在金属氧化物电介质薄膜的制造方法中，在第一工序中合成溶胶状态的前体溶液。 该前体溶液由待制造的复合金属 - 氧化物电介质的材料的组成元素组成。 在第二步中，通过旋涂将该前体溶液制成薄膜。 在第三步骤中，将该溶胶状的薄膜干燥，将其转变为干燥凝胶的薄膜。 此后，在第四步骤中，对干燥凝胶薄膜进行热分解，除去干凝胶薄膜中的有机物质，同时使该凝胶态薄膜结晶。

公开(公告)号：US4642266A

公开(公告)日：1987-02-10

申请号：US838280

申请日：1986-03-10

Applicant: Masaaki Funaki ,  Noboru Ohtani ,  Motoaki Yoshida ,  Akira Fujioka ,  Kazuo Sakiyama

Inventor： Masaaki Funaki ,  Noboru Ohtani ,  Motoaki Yoshida ,  Akira Fujioka ,  Kazuo Sakiyama

IPC: C08J7/04 ,  C08L71/02 ,  C09D133/14 ,  C09D157/04 ,  C09D163/00 ,  C09D183/06 ,  B32B27/36

CPC classification number: C08J7/047 ,  C09D133/14 ,  C09D157/04 ,  C09D163/00 ,  C09D183/06 ,  C08J2369/00 ,  C08J2483/02 ,  C08L71/02 ,  Y10T428/31507 ,  Y10T428/31909

Abstract: A non-fogging coating composition, which comprises (A) 0 to 50 parts by weight of epoxy group-containing organic silane compounds or partial hydrolyzates thereof, (B) 20 to 80 parts by weight of a polyhydric alcohol having an ethylene oxide chain, (C) 10 to 75 parts by weight of a polymer or copolymer having at least 20% by weight of repeating structural units having the general formula ##STR1## wherein, R.sup.4 and R.sup.5 independently stand for H or a lower alkyl group or carbonyl group and X stands for a side chain possessing an epoxy group, and (D) a catalytic amount of a curing catalyst. And a shaped article of polycarbonate type resin coated therewith.

Abstract translation: 一种无雾涂料组合物，其包含（A）0至50重量份的含环氧基的有机硅烷化合物或其部分水解产物，（B）20至80重量份具有环氧乙烷链的多元醇， （C）10至75重量份具有至少20重量％的具有通式为“IMAGE”的重复结构单元的聚合物或共聚物，其中R4和R5独立地代表H或低级烷基或羰基， X表示具有环氧基的侧链，（D）催化量的固化催化剂。 以及涂覆有聚碳酸酯型树脂的成形制品。

公开(公告)号：US09029219B2

公开(公告)日：2015-05-12

申请号：US14240710

申请日：2012-08-24

Applicant: Tadaaki Kaneko ,  Noboru Ohtani ,  Shoji Ushio ,  Ayumu Adachi ,  Satoru Nogami

Inventor： Tadaaki Kaneko ,  Noboru Ohtani ,  Shoji Ushio ,  Ayumu Adachi ,  Satoru Nogami

IPC: H01L21/02 ,  C30B19/04 ,  C30B29/36 ,  H01L21/67 ,  C30B19/12 ,  H01L29/16

CPC classification number: H01L21/02664 ,  C30B19/04 ,  C30B19/12 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02625 ,  H01L21/02658 ,  H01L21/67109 ,  H01L29/1608

Abstract: A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of polycrystalline SiC. In the through hole formation step, through holes (71c) are formed in the carbon layer (71) formed on the substrate (70). In the feed layer formation step, a Si layer (72) and a 3C—SiC polycrystalline layer (73) are formed on a surface of the carbon layer (71). In the epitaxial layer formation step, the substrate (70) is heated so that a seed crystal made of 4H—SiC single crystal is formed on portions of the surface of the substrate (70) that are exposed through the through holes (71c), and a close-spaced liquid-phase epitaxial growth of the seed crystal is caused to form a 4H—SiC single crystal layer.

Abstract translation: 制造半导体晶片的方法包括碳层形成步骤，通孔形成步骤，进料层形成步骤和外延层形成步骤。 在碳层形成工序中，在由多晶SiC构成的基板（70）的表面上形成碳层（71）。 在通孔形成工序中，在形成于基板（70）上的碳层（71）上形成通孔（71c）。 在进料层形成步骤中，在碳层（71）的表面上形成Si层（72）和3C-SiC多晶层（73）。 在外延层形成步骤中，加热衬底（70），使得在通过通孔（71c）暴露的衬底（70）的表面的部分上形成由4H-SiC单晶制成的晶种， 并且引起晶种的紧密间隔的液相外延生长形成4H-SiC单晶层。