发明授权
- 专利标题： Semiconductor device manufacturing apparatus
- 专利标题（中）： 半导体装置制造装置
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申请号： US884500申请日： 1997-06-27
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公开(公告)号： US5814153A公开(公告)日： 1998-09-29
- 发明人: Yoshimitsu Ishikawa
- 申请人： Yoshimitsu Ishikawa
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-084704 19950315
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/40 ; C23C16/455 ; C23C16/54 ; C23C16/56 ; H01L21/205 ; H01L21/31 ; H01L21/316 ; C23C16/00
摘要：
To provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus in which both a dependency on base material and a film characteristic are satisfied in film forming steps of the semiconductor manufacturing. There are provided a first film forming part 4 and a second film forming part 5 along a transporting direction A in the transporting system 1 for the semiconductor substrate 2, the first film forming part 4 is provided with a post-mixed type gas supplying means 7 for supplying a plurality of kinds of reaction gases onto a semiconductor substrate while the gases are being separated from each other through an inert gas, and the second film forming part 5 is provided with a premixed type gas supplying means 8 for supplying the mixture gas onto the semiconductor substrate while a plurality of kinds of reaction gases are mixed in advance.
公开/授权文献
- US4207102A Marking transfer sheets and process 公开/授权日：1980-06-10
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