发明授权
- 专利标题： Trench storage dram cell including a step transfer device
- 专利标题（中）： 包括步进式传送装置的沟槽存储装置
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申请号： US14523申请日： 1998-01-28
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公开(公告)号： US5831301A公开(公告)日： 1998-11-03
- 发明人: David Vaclav Horak , Toshiharu Furukawa , Steven John Holmes , Mark Charles Hakey , William Hsioh-Lien Ma , Jack Allan Mandelman
- 申请人： David Vaclav Horak , Toshiharu Furukawa , Steven John Holmes , Mark Charles Hakey , William Hsioh-Lien Ma , Jack Allan Mandelman
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corp.
- 当前专利权人： International Business Machines Corp.
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/8242 ; H01L27/108 ; H01L29/76
摘要：
A memory cell including a substrate, at least one deep trench capacitor in the substrate, at least one FET in the substrate disposed over at least a portion of the at least one deep trench capacitor, and at least one isolation region in the substrate surrounding the at least one FET and having a greater depth than the at least one FET. The at least one FET includes a gate disposed over at least a portion of the at least one deep trench capacitor and doped regions arranged on adjacent sides of the gate and separated from the gate by an insulating layer.
公开/授权文献
- USD362428S Personal computer 公开/授权日：1995-09-19