发明授权
US5834326A Process for producing a luminous element of group III nitride
semi-conductor
失效
III族氮化物半导体发光元件的制造方法
- 专利标题： Process for producing a luminous element of group III nitride semi-conductor
- 专利标题（中）： III族氮化物半导体发光元件的制造方法
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申请号： US763779申请日： 1996-12-11
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公开(公告)号： US5834326A公开(公告)日： 1998-11-10
- 发明人: Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
- 申请人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
- 申请人地址： JPX Tokyo
- 专利权人： Pioneer Electronic Corporation
- 当前专利权人： Pioneer Electronic Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-322992 19951212
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L33/32 ; H01L33/36 ; H01S5/00 ; H01S5/323 ; H01L21/00
摘要：
A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.
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