发明授权
US5846320A Method for forming crystal and crystal article obtained by said method
失效
通过所述方法得到的形成晶体和晶体的方法
- 专利标题： Method for forming crystal and crystal article obtained by said method
- 专利标题（中）： 通过所述方法得到的形成晶体和晶体的方法
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申请号： US468519申请日： 1995-06-06
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公开(公告)号： US5846320A公开(公告)日： 1998-12-08
- 发明人: Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
- 申请人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-73093 19860331; JPX62-67335 19870320
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/02 ; C23C16/04 ; C23C16/24 ; C23C16/30 ; C23C16/452 ; C30B25/00 ; C30B25/18 ; H01L21/20 ; H01L21/31 ; H01L21/84 ; C30B25/04
摘要：
A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.
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