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    Method for forming a deposited film
    3.
    发明授权
    Method for forming a deposited film 失效
    沉积膜形成方法

    公开(公告)号：US5593497A

    公开(公告)日：1997-01-14

    申请号：US415580

    申请日：1995-04-03

    申请人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

    发明人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

    IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/30 ,  C23C16/452 ,  C30B25/00 ,  C30B25/18 ,  H01L21/20 ,  H01L21/31 ,  H01L21/84 ,  C30B25/02

    CPC分类号： C23C16/04 ,  C23C16/24 ,  C23C16/452 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  F04C2240/603

    摘要： A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

    摘要翻译： 形成沉积膜的方法包括以下步骤：将用于形成沉积膜的气态原料中的任一种原料（A）和具有氧化作用性质的气态卤化氧化剂引入所述​​起始材料上， 预先设置成膜形成空间，其中具有用于形成沉积膜的具有成为晶体的材料的基板或者能够在其表面上选择性地分散形成晶核的材料预先布置成使所述起始材料（A）吸附在表面上 的所述衬底以形成吸附层（I）和将另一种原料（B）引入所述成膜空间的步骤，从而在所述吸附层（I）上引起表面反应以形成结晶沉积膜 （一世）。

    Process for forming and etching a film to effect specific crystal growth from activated species
    5.
    发明授权
    Process for forming and etching a film to effect specific crystal growth from activated species 失效
    用于形成和蚀刻膜以从活化物质实现特定晶体生长的方法

    公开(公告)号：US5591492A

    公开(公告)日：1997-01-07

    申请号：US396065

    申请日：1995-02-28

    申请人： Yutaka Hirai ,  Jinsho Matsuyama ,  Shigeru Shirai

    发明人： Yutaka Hirai ,  Jinsho Matsuyama ,  Shigeru Shirai

    IPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/205 ,  B05D3/00 ,  C30B28/14 ,  H05H1/02

    CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

    摘要翻译： 一种形成沉积膜的方法包括以下步骤：（a）在成膜空间中预先布置用于形成沉积膜的衬底; （b）通过引入由含有硅和卤素的化合物（SX）分解而形成的活化物质（A）和由用于成膜的化学物质（B）形成的活化物质（B））在所述基材上形成沉积膜 其与所述活化物质（A）在化学上相互反应，彼此分离成所述成膜空间，以在其间进行化学反应; 和（c）在成膜步骤（b）中将沉积的膜生长表面暴露于对待形成的沉积膜上具有蚀刻作用的气态物质（E），以在沉积膜生长表面上施加蚀刻作用，从而优先实现晶体 在特定面向方向的增长。