发明授权
- 专利标题: Method for cleaning workpiece
- 专利标题(中): 清洁工件的方法
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申请号: US844903申请日: 1997-04-22
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公开(公告)号: US5846335A公开(公告)日: 1998-12-08
- 发明人: Toshiro Maekawa , Koji Ono , Motoaki Okada , Tamami Takahashi , Shiro Mishima , Masako Kodera , Atsushi Shigeta , Riichiro Aoki , Gisuke Kouno
- 申请人: Toshiro Maekawa , Koji Ono , Motoaki Okada , Tamami Takahashi , Shiro Mishima , Masako Kodera , Atsushi Shigeta , Riichiro Aoki , Gisuke Kouno
- 申请人地址: JPX Tokyo JPX Kawasaki
- 专利权人: Ebara Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人: Ebara Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Tokyo JPX Kawasaki
- 优先权: JPX6-168767 19940628
- 主分类号: B08B1/00
- IPC分类号: B08B1/00 ; B08B1/04 ; B08B3/08 ; B24B37/34 ; B24D3/32 ; H01L21/00 ; H01L21/306 ; B08B1/02 ; B08B3/04 ; B08B7/04
摘要:
A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.
公开/授权文献
- US5272166A Method for selective reduction of Lp(a) 公开/授权日:1993-12-21