- 专利标题： Semiconductor optoelectric device and method of manufacturing the same
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申请号： US623829申请日： 1996-03-29
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公开(公告)号： US5864171A公开(公告)日： 1999-01-26
- 发明人: Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
- 申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX7-072678 19950330; JPX7-235802 19950913
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; H01L21/301 ; H01L21/31 ; H01L33/06 ; H01L33/16 ; H01L33/20 ; H01L33/24 ; H01L33/28 ; H01L33/32 ; H01L33/34 ; H01S5/00 ; H01S5/02 ; H01S5/30 ; H01S5/32 ; H01S5/323 ; H01S5/327 ; H01L33/00 ; H01S3/19
摘要：
The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.
公开/授权文献
- US5185720A Memory module for use in a large reconfigurable memory 公开/授权日：1993-02-09
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