发明授权
- 专利标题： Method for using oxygen plasma treatment on a dielectric layer
- 专利标题（中）： 在电介质层上使用氧等离子体处理的方法
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申请号： US887886申请日： 1997-07-03
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公开(公告)号： US5883015A公开(公告)日： 1999-03-16
- 发明人: Kent Liao , Dinos Huang , Tuby Tu , Kuang-Chao Chen , Wen-Doe Su
- 申请人： Kent Liao , Dinos Huang , Tuby Tu , Kuang-Chao Chen , Wen-Doe Su
- 申请人地址： TWX Hsinchu
- 专利权人： Mosel Vitelic Inc.
- 当前专利权人： Mosel Vitelic Inc.
- 当前专利权人地址： TWX Hsinchu
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; H01L21/314 ; H01L21/316
摘要：
The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,
公开/授权文献
- US4715393A Fluid dispersing checkvalve 公开/授权日：1987-12-29
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