公开(公告)号：US5883015A

公开(公告)日：1999-03-16

申请号：US887886

申请日：1997-07-03

申请人： Kent Liao ,  Dinos Huang ,  Tuby Tu ,  Kuang-Chao Chen ,  Wen-Doe Su

发明人： Kent Liao ,  Dinos Huang ,  Tuby Tu ,  Kuang-Chao Chen ,  Wen-Doe Su

IPC分类号： C23C16/40 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

摘要： The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,

摘要翻译： 用于沉积电介质层的方法可用于均匀地沉积要施加到半导体器件的介质层。 该方法包括以下步骤：a）提供衬底; b）在所述缓冲液上沉积第一介电膜; c）引入氧等离子体以消除基板表面上电荷的不均匀分布; 以及d）在用氧等离子体处理的第一电介质膜上形成第二电介质膜，以获得在衬底上具有均匀厚度的电介质层，

公开(公告)号：US06391739B1

公开(公告)日：2002-05-21

申请号：US09619023

申请日：2000-07-19

申请人： Kent Liao

发明人： Kent Liao

IPC分类号： H01L2176

CPC分类号： H01L21/76224

摘要： A process of fabricating a shallow trench isolation structure includes the steps of: providing a substrate; forming a first insulating layer over the substrate; forming a nitride masking layer over the first insulating layer; patterning and etching the nitride masking layer, the first insulating layer and the substrate to remove portions of the nitride masking layer, the first insulating layer and the substrate thereby forming an exposed trench in the substrate, the trench substantially defining boundaries of the isolation structure; depositing a second insulating layer into the trench and over the nitride masking layer; planarizing the second insulating layer to expose the nitride masking layer; removing the nitride masking layer to expose the first insulating layer, and forming a divot proximate an edge of the trench; depositing a silicon layer into the divot, and over the first insulating later and the second insulating layer; etching the silicon layer to expose the first insulating layer, a central portion of the second insulating layer, and leaving a remaining portion of the silicon layer filling the divot; and oxidizing the remaining portion of the silicon layer.

摘要翻译： 制造浅沟槽隔离结构的工艺包括以下步骤：提供衬底; 在所述衬底上形成第一绝缘层; 在所述第一绝缘层上形成氮化物掩模层; 图案化和蚀刻氮化物掩蔽层，第一绝缘层和衬底以去除氮化物掩蔽层，第一绝缘层和衬底的部分，从而在衬底中形成暴露的沟槽，沟槽基本上限定隔离结构的边界; 将第二绝缘层沉积到所述沟槽中并在所述氮化物掩蔽层上方; 平面化第二绝缘层以暴露氮化物掩蔽层; 去除所述氮化物掩模层以暴露所述第一绝缘层，以及在所述沟槽的边缘附近形成边缘; 在第一绝缘层和第二绝缘层之上沉积硅层; 蚀刻所述硅层以暴露所述第一绝缘层，所述第二绝缘层的中心部分，并且留下所述硅层的剩余部分填充所述凹陷; 并氧化硅层的剩余部分。