A current reference device in integrated circuit form with a reference resistor includes a first MOS transistor and a second MOS transistor having the same type of conductivity, the first transistor having its gate and its drain connected together to a first terminal of the reference resistor, the second transistor having its gate and its drain connected together to a second terminal of the reference resistor, the first transistor having a threshold voltage greater than that of the second transistor, these two transistors being biased in saturated mode, the source of each of these transistors being biased at the same potential as the substrate or the well in which the transistor is made.