发明授权
- 专利标题： Nitride system semiconductor device with oxygen
- 专利标题（中）： 氮化物系统半导体器件与氧气
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申请号： US924834申请日： 1997-09-05
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公开(公告)号： US5932896A公开(公告)日： 1999-08-03
- 发明人: Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
- 申请人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
- 申请人地址： JPX Kawasaki-shi
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki-shi
- 优先权： JPX8-236744 19960906; JPX9-037990 19970221
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/205 ; H01L33/06 ; H01L33/14 ; H01L33/32 ; H01L33/34 ; H01L33/40 ; H01S5/00 ; H01S5/323 ; H01S5/343 ; H01L33/00
摘要：
The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0
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