In a process where a capacitor using a BST film for a dielectric film is incorporated into a DRAM, the film is selectively removed by wet etching for forming a contact hole. For this purpose, a bottom electrode is formed and then an amorphous film is formed on the entire surface of a silicon wafer. And after forming a crystalline top electrode on this film, lamp heating is performed to crystallize only the area that is in contact with the electrode. Then wet etching is performed using a solution of hydrogen and ammonium fluoride (1:2), which allows removing only the amorphous area selectively.