发明授权
US5948168A Distributed microwave plasma reactor for semiconductor processing
失效
用于半导体加工的分布式微波等离子体反应器
- 专利标题: Distributed microwave plasma reactor for semiconductor processing
- 专利标题(中): 用于半导体加工的分布式微波等离子体反应器
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申请号: US947820申请日: 1997-10-09
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公开(公告)号: US5948168A公开(公告)日: 1999-09-07
- 发明人: Hongching Shan , Harald Herchen , Michael Welch
- 申请人: Hongching Shan , Harald Herchen , Michael Welch
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C16/44 ; C23C16/452 ; C23C16/455 ; C23C16/50 ; C23C16/511 ; C23C16/52 ; C23F4/00 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; C23C16/00
摘要:
A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.
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