Invention Grant
US5952687A Semiconductor memory device having a trench capacitor with lower
electrode inside the trench
失效
具有沟槽电容器的半导体存储器件，其内部具有下部电极
- Patent Title: Semiconductor memory device having a trench capacitor with lower electrode inside the trench
- Patent Title (中): 具有沟槽电容器的半导体存储器件，其内部具有下部电极
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Application No.: US889324Application Date: 1997-07-08
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Publication No.: US5952687APublication Date: 1999-09-14
- Inventor: Takashi Kawakubo , Kazuhiro Eguchi , Shuichi Komatsu , Kazuhide Abe
- Applicant: Takashi Kawakubo , Kazuhiro Eguchi , Shuichi Komatsu , Kazuhide Abe
- Applicant Address: JPX Kawasaki
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JPX Kawasaki
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8242 ; H01L27/108 ; H01L29/68
Abstract:
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.
Public/Granted literature
- US5432939A Trusted personal computer system with management control over initial program loading Public/Granted day:1995-07-11
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