A dynamic random access memory (DRAM) organized as a matrix of basic organizational units each having a capacitor pair. Each capacitor pair has one of the first capacitors and one of the second capacitors in it. Each basic organizational unit is arranged as follows: a first word line and a second word line are formed, as parallel lines, on the substrate; the first word line lies between a first doped region and a second doped region to define a first transistor; the second word line lies between the second doped region of the first transistor and a third doped regions to define a second transistor; a bit line lies on the second doped region of the substrate at an oblique angle to the first word line and second word line; the first capacitor overlies the first doped region and the first word line, is substantially centered over the first doped region, is connected to the first doped region via a first contact hole, and has a hexagon-shaped planar portion; the second capacitor overlies the third doped region and the second word line, is substantially centered over the third doped region, is connected to the third doped region via a second contact hole, and has a hexagon-shaped planar portion; and a center point of each of the first doped region, second doped region and third doped region of the basic organizational unit are connectable by an imaginary straight characteristic line.