发明授权
- 专利标题: Metal interconnection and method for making
- 专利标题(中): 金属互连和制造方法
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申请号: US791161申请日: 1997-01-30
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公开(公告)号: US5973402A公开(公告)日: 1999-10-26
- 发明人: Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
- 申请人: Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
- 申请人地址: JPX Kobe
- 专利权人: Kawasaki Steel Corporation
- 当前专利权人: Kawasaki Steel Corporation
- 当前专利权人地址: JPX Kobe
- 优先权: JPX5-064117 19930323; JPX5-068673 19930326; JPX5-070342 19930329; JPX5-282493 19931111
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/3213 ; H01L21/768 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.