公开(公告)号：US6001736A

公开(公告)日：1999-12-14

申请号：US610341

申请日：1996-03-04

申请人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

发明人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L21/02068 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877

摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

摘要翻译： 绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。 通过氢等离子体处理来调整底层金属膜的表面状态。 通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。 接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。 接触孔可以有效地填充铝。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5521423A

公开(公告)日：1996-05-28

申请号：US228257

申请日：1994-04-15

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

IPC分类号： H01L23/525 ,  H01L29/04 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5252 ,  H01L2924/0002

摘要： An antifuse element suitable for use in FPGA. When a device is miniaturized to reduce the write voltage in an antifuse element and as the film thickness of the antifuse dielectric film is being reduced, the dielectric breakdown voltage is greatly variable due to the irregularity of the underlying metal. If the dielectric film is formed by a metal oxide having a relatively high specific permitivity without changing its parasitic capacity as compared to the prior art, the film thickness of the dielectric film can be increased in comparison with oxide and nitride films formed according to the prior art. The irregularity of the underlying metal can be reduced by coating it with a metal nitride or TiB film or TiC film. To equalize the dielectric breakdown voltage, another insulation film having a film thickness such that the direct tunnel conduction is dominant is formed below the metal oxide. To reduce the irregularity of the metal surface and to reduce the resistance after dielectric breakdown, an amorphous silicon layer is deposited before the metal oxide is deposited thereover to form a laminated film.

摘要翻译： 适用于FPGA的反熔丝元件。 当器件小型化以降低反熔丝元件中的写入电压时，并且由于反熔丝电介质膜的膜厚度正在减小，所以介电击穿电压由于下面的金属的不规则性而极大地变化。 如果与现有技术相比，电介质膜由具有相对高的比容容的金属氧化物形成而不改变其寄生电容，则与根据现有技术形成的氧化物和氮化物膜相比，电介质膜的膜厚可以增加 艺术。 可以通过用金属氮化物或TiB膜或TiC膜涂覆来降低底层金属的不规则性。 为了均衡绝缘击穿电压，具有膜厚度使得直接隧道导通为主的另一绝缘膜形成在金属氧化物的下面。 为了减少金属表面的不规则性并且在介电击穿之后降低电阻，在将金属氧化物沉积在其之前形成非晶硅层以形成层压膜。

公开(公告)号：US06436203B1

公开(公告)日：2002-08-20

申请号：US09551393

申请日：2000-04-18

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： B05D136

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

摘要翻译： 本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。 在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中 引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。 对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

公开(公告)号：US06089184A

公开(公告)日：2000-07-18

申请号：US92060

申请日：1998-06-05

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： C23C16/18 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

公开(公告)号：US06063703A

公开(公告)日：2000-05-16

申请号：US81047

申请日：1998-05-19

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5973402A

公开(公告)日：1999-10-26

申请号：US791161

申请日：1997-01-30

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。