A system for scanning and measuring a surface charge of a sample immersed in a conductive medium, such as an aqueous electrolytic solution or a gel, or positioned on a conducting plate. The system has a semiconductor with a probing surface clad in a charge-sensitive layer. The probing surface moves over the sample during scanning while a bias voltage V.sub.BIAS is applied to create a depletion layer in the semiconductor and to induce the system to alter a measurable electrical property. The electrical property is monitored with the aid of a measuring device and the measurement is correlated to the sample's surface charge. In a preferred embodiment the semiconductor is a part of a cantilever structure of the type having a probing tip and the probing surface is located on the apex of the probing tip thereby enabling examination of the topology and surface charge of the sample concurrently.