发明授权
- 专利标题: Electrodes for p-type group III nitride compound semiconductors
- 专利标题(中): p型III族氮化物半导体电极
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申请号: US663696申请日: 1996-06-14
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公开(公告)号: US6008539A公开(公告)日: 1999-12-28
- 发明人: Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
- 申请人: Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
- 申请人地址: JPX Aichi-ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JPX Aichi-ken
- 优先权: JPX7-174076 19950616; JPX8-160886 19960531
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/285 ; H01L29/43 ; H01L29/45 ; H01L33/32 ; H01L33/38 ; H01L33/40 ; H01L23/48
摘要:
An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
公开/授权文献
- USD335694S Golf putter head 公开/授权日:1993-05-18