公开(公告)号：US6008539A

公开(公告)日：1999-12-28

申请号：US663696

申请日：1996-06-14

申请人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

发明人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L23/48

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

摘要翻译： 具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。 第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。 在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。 热处理改变或反转元素Ni和Au的分布。 也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。 结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

公开(公告)号：US6121127A

公开(公告)日：2000-09-19

申请号：US440860

申请日：1999-11-16

申请人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

发明人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

摘要翻译： 具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。 第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。 在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。 热处理改变或反转元素Ni和Au的分布。 也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。 结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

公开(公告)号：US06806571B2

公开(公告)日：2004-10-19

申请号：US10239895

申请日：2003-02-19

申请人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

发明人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L21/242 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度n + 3层; Si掺杂n型Al0.07Ga0.93N n包层4; Si掺杂的n型GaN n引导层5; 具有多量子阱（MQW）结构的有源层6，并且包括Ga 0.9 In 0.1 N阱层61（厚度：约2nm）和Ga 0.97 In 0.03 N势垒层62（厚度：约4nm）， 层61和62交替层压; Mg掺杂的GaN p引导层7; Mg掺杂的Al0.07Ga0.93N p型包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。 该电极的接触电阻通过热处理而降低。

公开(公告)号：US07018915B2

公开(公告)日：2006-03-28

申请号：US10860035

申请日：2004-06-04

申请人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

发明人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

IPC分类号： H01L21/28 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/242 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度的n + 3层3; Si掺杂的n型Al 0.07 N 0.93 N n包覆层4; Si掺杂的n型GaN n引导层5; 具有多重量子阱（MQW）结构的有源层6，并且包括Ga 0.1 N 1 In 0.1 N阱层61（厚度：约2nm）和Ga < SUB> 0.97在0.03N阻挡层62（厚度：约4nm）中，层61和62交替层叠; Mg掺杂的GaN p引导层7; Mg掺杂的Al 0.07 N 0.93 N p包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。 该电极的接触电阻通过热处理而降低。

公开(公告)号：US07646036B2

公开(公告)日：2010-01-12

申请号：US12068247

申请日：2008-02-04

申请人： Takahiro Kozawa ,  Kazuyoshi Tomita ,  Toshiya Uemura ,  Shigemi Horiuchi

发明人： Takahiro Kozawa ,  Kazuyoshi Tomita ,  Toshiya Uemura ,  Shigemi Horiuchi

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. A positive electrode is formed on a p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (Pd) and copper (Cu) as additives and also contains oxygen (O). By virtue of this structure, migration of silver from the silver alloy reflecting electrode layer and blackening of the interface between the silver alloy layer and the ITO light-transmitting electrode layer disposed thereunder are prevented, whereby light extraction efficiency can be enhanced.

摘要翻译： 本发明的目的是防止在III族氮化物系化合物半导体发光元件的电极中含有的银的迁移。 正电极形成在p型层上。 在正极中，将ITO透光电极层，银合金反射电极层，层叠有Ti层和Pt层的扩散防止层和金厚膜电极依次层叠在p 型层。 由银合金制成的反射电极层包含钯（Pd）和铜（Cu）作为添加剂，并且还含有氧（O）。 由于这种结构，防止银从银合金反射电极层的迁移以及布置在其上的银合金层和ITO透光电极层之间的界面变黑，从而可以提高光提取效率。

公开(公告)号：US06291840B1

公开(公告)日：2001-09-18

申请号：US08979346

申请日：1997-11-26

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

IPC分类号： H01L3300

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32

摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

摘要翻译： 通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。 通过热处理将两层合金化以形成透光电极。 因此，透光电极具有降低的接触电阻和改善的透光性，并且给出长时间稳定的发光图案。 此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

公开(公告)号：US07015515B2

公开(公告)日：2006-03-21

申请号：US10163335

申请日：2002-06-07

申请人： Tetsuya Taki ,  Makoto Asai ,  Katsuhisa Sawazaki ,  Naoki Kaneyama ,  Toshiya Uemura

发明人： Tetsuya Taki ,  Makoto Asai ,  Katsuhisa Sawazaki ,  Naoki Kaneyama ,  Toshiya Uemura

IPC分类号： H01L29/15

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3 gas is circulated together with H2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.

摘要翻译： 在通过MOCVD方法形成构成超晶格结构的层中的一个之后，NH 3气体与H 2气体一起作为载气循环，从而进行吹扫步骤。 在清洗步骤之后，形成下一层。

公开(公告)号：US06955936B2

公开(公告)日：2005-10-18

申请号：US10670518

申请日：2003-09-26

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

IPC分类号： H01L21/28 ,  H01L23/485 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L21/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L29/452 ,  H01L2224/05073 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.

摘要翻译： 具有p型导电的III族氮化物化合物半导体的电极焊盘包括形成在电极层上的具有第一，第二和第三金属层的三层结构。 通过在第三金属层上蚀刻并覆盖第一，第二和第三金属层的侧面，形成具有暴露第三金属层的中心部分的窗口的保护膜。 第二金属层由金（Au）制成。 第一金属层由电离电位低于金（Au）的元素制成。 第三金属由对金（Au）的保护膜具有更强的粘合性的元素制成。 因此，电极焊盘的这种结构提高了保护层和第三层之间的粘合强度，并且防止了保护膜的侧面的蚀刻。 此外，半导体和电极焊盘之间的接触电阻降低，因此提高了电极焊盘的欧姆特性。

公开(公告)号：US6103543A

公开(公告)日：2000-08-15

申请号：US942595

申请日：1997-10-02

申请人： Toshiya Uemura ,  Naoki Shibata

发明人： Toshiya Uemura ,  Naoki Shibata

IPC分类号： H01L21/302 ,  H01L21/285 ,  H01L21/3065 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L21/20

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01S5/0425 ,  H01L33/32 ,  H01S5/32341

摘要： A base layer of electode made of at least a metal selected from V, Nb, and Zr, or an alloy containing such metal on an n-type GaN compound semiconductor layer. Further, a main electrode layer made of other metal is formed on the base layer. Then, an n electrode is formed by subjecting the semiconductor layer, the base layer, and the main electrode layer to a heat treatment.

摘要翻译： 由选自V，Nb和Zr中的至少一种金属的电极基底层或在n型GaN化合物半导体层上含有这种金属的合金。 此外，在基底层上形成由其他金属制成的主电极层。 然后，通过对半导体层，基底层和主电极层进行热处理来形成n电极。

公开(公告)号：US6033927A

公开(公告)日：2000-03-07

申请号：US16809

申请日：1998-01-30

申请人： Naoki Shibata ,  Atsuo Hirano ,  Toshiya Uemura

发明人： Naoki Shibata ,  Atsuo Hirano ,  Toshiya Uemura

IPC分类号： H01L21/301 ,  H01L33/20 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01L21/304

CPC分类号： H01L33/0095 ,  H01L33/32

摘要： A wafer is diced up to a depth of 15 .mu.m from the surface of a sapphire substrate along a dicing line set in the center of a processed region between electrodes for respective devices by using a blade having a width narrower than the width of the processed region, so that separation grooves are formed. In the present invention, the first contact layer, the second contact layer, the p layer, the light-emitting layer and the n layer are arranged in a region between a side surface of the blade and a side wall of the electrode formation region. Accordingly, stress is concentrated into an intersection line of the electrode formation region and the side wall which is erected so as to be L-shaped. Thus, cracks generated at the time of dicing are formed-toward the intersection line. As a result, the cracks never enter into the electrode formation region and, accordingly, never enter into the lower portion of the electrode. Accordingly, the current path for the electrode is prevented from being disturbed by the cracks.

摘要翻译： 通过使用宽度窄于加工的宽度的刀片，将晶片从蓝宝石衬底的表面沿着沿着设置在各个器件的电极之间的处理区域的中心处的切割线切割成15μm的深度 区域，从而形成分隔槽。 在本发明中，第一接触层，第二接触层，p层，发光层和n层布置在叶片的侧表面和电极形成区的侧壁之间的区域中。 因此，应力集中在电极形成区域和竖立成L形的侧壁的交线中。 因此，在切割时产生的裂纹形成为交叉线。 结果，裂纹不会进入电极形成区域，因此不会进入电极的下部。 因此，防止电极的电流路径受到裂纹的干扰。