公开(公告)号：US6008539A

公开(公告)日：1999-12-28

申请号：US663696

申请日：1996-06-14

申请人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

发明人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L23/48

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

摘要翻译： 具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。 第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。 在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。 热处理改变或反转元素Ni和Au的分布。 也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。 结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

公开(公告)号：US6121127A

公开(公告)日：2000-09-19

申请号：US440860

申请日：1999-11-16

申请人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

发明人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

摘要翻译： 具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。 第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。 在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。 热处理改变或反转元素Ni和Au的分布。 也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。 结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

公开(公告)号：US06806571B2

公开(公告)日：2004-10-19

申请号：US10239895

申请日：2003-02-19

申请人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

发明人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L21/242 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度n + 3层; Si掺杂n型Al0.07Ga0.93N n包层4; Si掺杂的n型GaN n引导层5; 具有多量子阱（MQW）结构的有源层6，并且包括Ga 0.9 In 0.1 N阱层61（厚度：约2nm）和Ga 0.97 In 0.03 N势垒层62（厚度：约4nm）， 层61和62交替层压; Mg掺杂的GaN p引导层7; Mg掺杂的Al0.07Ga0.93N p型包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。 该电极的接触电阻通过热处理而降低。

公开(公告)号：US07018915B2

公开(公告)日：2006-03-28

申请号：US10860035

申请日：2004-06-04

申请人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

发明人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

IPC分类号： H01L21/28 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/242 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度的n + 3层3; Si掺杂的n型Al 0.07 N 0.93 N n包覆层4; Si掺杂的n型GaN n引导层5; 具有多重量子阱（MQW）结构的有源层6，并且包括Ga 0.1 N 1 In 0.1 N阱层61（厚度：约2nm）和Ga < SUB> 0.97在0.03N阻挡层62（厚度：约4nm）中，层61和62交替层叠; Mg掺杂的GaN p引导层7; Mg掺杂的Al 0.07 N 0.93 N p包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。 该电极的接触电阻通过热处理而降低。

公开(公告)号：US20060273324A1

公开(公告)日：2006-12-07

申请号：US10566211

申请日：2004-07-26

申请人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

发明人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/00014 ,  H01L2924/00

摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.

摘要翻译： 半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。 在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和 总共有5层MQW结构。 在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

公开(公告)号：US07015515B2

公开(公告)日：2006-03-21

申请号：US10163335

申请日：2002-06-07

申请人： Tetsuya Taki ,  Makoto Asai ,  Katsuhisa Sawazaki ,  Naoki Kaneyama ,  Toshiya Uemura

发明人： Tetsuya Taki ,  Makoto Asai ,  Katsuhisa Sawazaki ,  Naoki Kaneyama ,  Toshiya Uemura

IPC分类号： H01L29/15

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3 gas is circulated together with H2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.

摘要翻译： 在通过MOCVD方法形成构成超晶格结构的层中的一个之后，NH 3气体与H 2气体一起作为载气循环，从而进行吹扫步骤。 在清洗步骤之后，形成下一层。

公开(公告)号：US06933169B2

公开(公告)日：2005-08-23

申请号：US10370458

申请日：2003-02-24

申请人： Naoki Shibata ,  Makoto Asai

发明人： Naoki Shibata ,  Makoto Asai

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/145 ,  H01L2924/0002 ,  H01L2924/00

摘要： A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light emission, to another region which does. Consequently, better current efficiency is obtained. Further, diverting current flow from the region below the electrode pad where mechanical damages are expected deters deterioration of the region. Consequently, the LED lasts longer and is a better quality product.

摘要翻译： LED具有形成在电极焊盘下面的薄的高电阻或绝缘层，以便将电流流从电极焊盘的下方的区域转移到另一区域。 因此，获得更好的电流效率。 此外，从预期的机械损伤的电极焊盘下方的区域转移电流可阻止该区域的劣化。 因此，LED持续时间更长，更优质的产品。

公开(公告)号：US20110101412A1

公开(公告)日：2011-05-05

申请号：US12929231

申请日：2011-01-10

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.

摘要翻译： 制造III族氮化物化合物的发光半导体器件的方法包括形成N型导电的N层，N层包括氮化镓，形成满足式（Al x Ga 1 -x3）y3In1-y3N，其中在N层上形成满足公式的III族氮化物化合物半导体的发射层Al x1Gay1In1，其中0和nlE; x3和nlE; 1,0和n1E; y3和nlE; 1和0＆lt; n1E; x3 + y3＆ -x1-y1N，其中0＆nlE; x1＆nlE; 1,0和nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE; 1在高载流子浓度层N +层上，将Si和Zn掺杂到发射层中，形成P层 在发射层上的P型导电，包含满足式Al x Ga 1-x 2 N的氮化铝镓的P层，其中0＆lt; n1E; x2＆nlE; 1，并且在P型上形成P型导电的接触层 层，接触层包括氮化镓。

公开(公告)号：US07867800B2

公开(公告)日：2011-01-11

申请号：US12003173

申请日：2007-12-20

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2）的厚度为500埃。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 发射层（5）的厚度约为0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×1017 / cm3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

公开(公告)号：US06265726B1

公开(公告)日：2001-07-24

申请号：US09379621

申请日：1999-08-24

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.