发明授权
- 专利标题： Ferroelectric semiconductor memory device
- 专利标题（中）： 铁电半导体存储器件
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申请号： US981441申请日： 1998-05-28
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公开(公告)号： US6038160A公开(公告)日： 2000-03-14
- 发明人: Joji Nakane , Nobuyuki Moriwaki
- 申请人： Joji Nakane , Nobuyuki Moriwaki
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-098269 19960419
- 主分类号： G11C14/00
- IPC分类号： G11C14/00 ; G11C11/22 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor memory device of nonvolatile ferroelectric capable of stable operation without loss of logic voltage "L" data of the memory cell in rewriting operation. To achieve, for example, as shown in FIG. 1, diodes 1, 2 are connected to cell plate lines 39, 40. Therefore, in rewriting operation, if there is a parasitic resistance 3 in the cell plate line 39, it is possible to prevent occurrence of transient phenomenon of temporary transition of the cell plate line 39 to an excessive negative voltage (for example, lower than -1V) which may cause loss of data.
公开/授权文献
- US5280824A Sealing element for inflatable packer 公开/授权日：1994-01-25
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