发明授权
US6046465A Buried reflectors for light emitters in epitaxial material and method
for producing same
失效
用于外延材料中的发光体的埋地反射器及其制造方法
- 专利标题： Buried reflectors for light emitters in epitaxial material and method for producing same
- 专利标题（中）： 用于外延材料中的发光体的埋地反射器及其制造方法
-
申请号： US62368申请日： 1998-04-17
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公开(公告)号： US6046465A公开(公告)日： 2000-04-04
- 发明人: Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
- 申请人： Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
- 申请人地址： CA Palo Alto
- 专利权人： Hewlett-Packard Company
- 当前专利权人： Hewlett-Packard Company
- 当前专利权人地址： CA Palo Alto
- 主分类号： H01L33/10
- IPC分类号： H01L33/10 ; H01L33/12 ; H01L33/24 ; H01S5/00 ; H01S5/02 ; H01S5/14 ; H01S5/183 ; H01S5/187 ; H01S5/323 ; H01S5/343 ; C30B19/00 ; H01L33/00
摘要：
A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
公开/授权文献
- USD401418S Multiple head tooth brush 公开/授权日：1998-11-24