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    Epitaxial material grown laterally within a trench and method for producing same
    2.
    发明授权
    Epitaxial material grown laterally within a trench and method for producing same 失效
    在沟槽内横向生长的外延材料及其制造方法

    公开(公告)号：US06500257B1

    公开(公告)日：2002-12-31

    申请号：US09062028

    申请日：1998-04-17

    申请人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

    发明人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

    IPC分类号： C30B2300

    CPC分类号： H01L21/02647 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642

    摘要： An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

    摘要翻译： 在沟槽中横向生长的外延材料允许制造基本上低的位错密度的基于沟槽的半导体材料。 从沟槽的侧壁开始生长使晶格生长模板中存在的位错的密度最小化，这使再生材料中的位错密度最小化。 此外，通过允许再生长填充和溢出沟槽，低位错密度材料可以覆盖生长低位错密度材料的基底的整个表面。 此外，随着沟槽生长过程的连续迭代，可以获得更高质量的材料。 然后可以从低位错密度材料制造需要稳定的高质量外延材料的器件。

    Integrated circuit substrate that accommodates lattice mismatch stress
    3.
    发明授权
    Integrated circuit substrate that accommodates lattice mismatch stress 有权
    集成电路基板，适应晶格失配应力

    公开(公告)号：US06429466B2

    公开(公告)日：2002-08-06

    申请号：US09774199

    申请日：2001-01-29

    申请人： Yong Chen ,  Scott W. Corzine ,  Theodore I. Kamins ,  Michael J. Ludowise ,  Pierre H. Mertz ,  Shih-Yuan Wang

    发明人： Yong Chen ,  Scott W. Corzine ,  Theodore I. Kamins ,  Michael J. Ludowise ,  Pierre H. Mertz ,  Shih-Yuan Wang

    IPC分类号： H01L31072

    CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/26533

    摘要： A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The second material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the first material by the second material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layer is preferably SiO2 that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layer.

    摘要翻译： 一种用于生长晶体层的方法，其包括在第二材料的晶体衬底的生长表面上的第一材料，其中第一材料和第二材料具有不同的晶格常数。 在衬底中产生掩埋层，使得掩埋层将衬底的包含生长表面的衬底与衬底的其余部分隔离。 然后将第二种材料在生长温度下沉积在生长表面上。 衬底的隔离层的厚度小于在其上结晶第二材料时在第一材料的晶格中产生缺陷的厚度。 掩埋层在生长温度下具有足够的延展性，以允许隔离层的晶格变形，而不使基底的其余部分变形。 本发明可用于在硅衬底上生长III-V半导体材料层。 在硅基基板的情况下，掩埋层优选是在生长温度下足够有韧性的SiO 2，以允许隔离的基底层的变形。

    Optical element having electrically controllable refractive index
    4.
    发明授权
    Optical element having electrically controllable refractive index 失效
    具有电可控折射率的光学元件

    公开(公告)号：US06259853B1

    公开(公告)日：2001-07-10

    申请号：US09389917

    申请日：1999-09-03

    申请人： Yong Chen ,  Scott W. Corzine ,  Shih-Yuan Wang

    发明人： Yong Chen ,  Scott W. Corzine ,  Shih-Yuan Wang

    IPC分类号： G02B600

    CPC分类号： G11C13/041 ,  G02F1/19 ,  G02F1/21 ,  G02F1/315 ,  G02F2203/02 ,  G02F2203/023

    摘要： An optical element having a variable index of refraction. The optical element utilizes a layer of a transparent dielectric material having an index of refraction determined by the concentration of hydrogen in the dielectric material. A layer of a hydrogen reservoir medium that includes a material that acts as a source or a sink for hydrogen is placed adjacent to the transparent dielectric layer. The reservoir medium accepts hydrogen from the transparent layer in response to a first electric field being applied across the transparent layer and reservoir layer and donates hydrogen to the transparent layer in response to a second electric field being applied across the transparent layer and the reservoir layer. The electric fields are generated by applying appropriate potentials across first and second electrodes that sandwich the dielectric and reservoir layers. The preferred reservoir material is KOH. The transparent dielectric material preferably includes a material chosen from the group consisting of hydrides of an alkali, alkaline-earth, rare-earth metals, and alloys thereof.

    摘要翻译： 具有可变折射率的光学元件。 光学元件利用透明电介质材料层，其具有通过介电材料中的氢浓度确定的折射率。 包含作为氢源的物质或氢的沉积物的氢储层介质的层被放置在与透明介电层相邻的位置。 储存介质响应于穿过透明层和储存层施加第一电场而从透明层接收氢，并且响应于穿过透明层和储存层施加的第二电场而将氢提供给透明层。 通过在夹持电介质层和储层的第一和第二电极上施加合适的电势来产生电场。 优选的储层材料是KOH。 透明电介质材料优选包括选自碱金属，碱土金属，稀土金属的氢化物及其合金的材料。

    Method for relieving lattice mismatch stress in semiconductor devices
    5.
    发明授权
    Method for relieving lattice mismatch stress in semiconductor devices 有权
    减少半导体器件晶格失配应力的方法

    公开(公告)号：US06211095B1

    公开(公告)日：2001-04-03

    申请号：US09221025

    申请日：1998-12-23

    申请人： Yong Chen ,  Scott W. Corzine ,  Theodore I. Kamins ,  Michael J. Ludowise ,  Pierre H. Mertz ,  Shih-Yuan Wang

    发明人： Yong Chen ,  Scott W. Corzine ,  Theodore I. Kamins ,  Michael J. Ludowise ,  Pierre H. Mertz ,  Shih-Yuan Wang

    IPC分类号： H01L2131

    CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/26533

    摘要： A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The first material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the second material by the first material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layer is preferably SiO2 that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layer.

    摘要翻译： 一种用于生长晶体层的方法，其包括在第二材料的晶体衬底的生长表面上的第一材料，其中第一材料和第二材料具有不同的晶格常数。 在衬底中产生掩埋层，使得掩埋层将衬底的包含生长表面的衬底与衬底的其余部分隔离。 然后在生长温度下将第一种材料沉积在生长表面上。 衬底的隔离层的厚度小于通过第一材料在其上结晶而在第二材料的晶格中引起缺陷的厚度。 掩埋层在生长温度下具有足够的延展性，以允许隔离层的晶格变形，而不使基底的其余部分变形。 本发明可用于在硅衬底上生长III-V半导体材料层。 在硅基基板的情况下，掩埋层优选是在生长温度下足够有韧性的SiO 2，以允许隔离的基底层的变形。

    Long-Wavelength VCSEL using buried bragg reflectors
    6.
    发明授权
    Long-Wavelength VCSEL using buried bragg reflectors 有权
    长波长VCSEL使用埋地布拉格反射器

    公开(公告)号：US06252896B1

    公开(公告)日：2001-06-26

    申请号：US09263696

    申请日：1999-03-05

    申请人： Michael R. T. Tan ,  Dubravko I. Babic ,  Scott W. Corzine ,  Tirmula R. Ranganath ,  Shih-Yuan Wang ,  Wayne Bi

    发明人： Michael R. T. Tan ,  Dubravko I. Babic ,  Scott W. Corzine ,  Tirmula R. Ranganath ,  Shih-Yuan Wang ,  Wayne Bi

    IPC分类号： H01S500

    CPC分类号： H01S5/426 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/041 ,  H01S5/18311 ,  H01S5/18369

    摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.

    摘要翻译： 光泵浦垂直腔表面发射激光器（VCSEL）器件和制造该器件的方法利用执行滤波操作的两个分离的衬底，以仅选择性地仅透射由器件产生的具有长峰值波长的光。 光泵浦VCSEL器件是自泵浦器件，其可以产生泵浦光以驱动器件发射具有长峰值波长的输出激光。 光泵浦VCSEL器件包括形成在两个衬底中的一个上的短波长VCSEL和在另一衬底上形成的长波长VCSEL。 短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。 短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。 可以使用透明光学粘合剂材料或金属粘合材料将短波长VCSEL粘合到长波长VCSEL上。 衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生并且不被长波长VCSEL吸收的短波长光主要被两个分离的衬底吸收。 然而，由长波长VCSEL产生的长波长光被允许通过基板作为输出激光传输。

    Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
    10.
    发明授权
    Vertical-cavity surface-emitting laser generating light with a defined direction of polarization 失效
    垂直腔表面发射激光产生具有确定的极化方向的光

    公开(公告)号：US5727014A

    公开(公告)日：1998-03-10

    申请号：US551302

    申请日：1995-10-31

    申请人： Shih-Yuan Wang ,  Michael R. T. Tan ,  William D. Holland ,  John P. Ertel ,  Scott W. Corzine

    发明人： Shih-Yuan Wang ,  Michael R. T. Tan ,  William D. Holland ,  John P. Ertel ,  Scott W. Corzine

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/30 ,  H01S5/42 ,  H01S3/19

    CPC分类号： H01S5/18355 ,  H01S5/18308 ,  H01S5/18338 ,  H01S5/18394 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/423

    摘要： A vertical-cavity surface-emitting laser that generates light having a fixed direction of polarization. The laser has a plane light-generating region sandwiched between a first conductive mirror region and a second conductive mirror region. The first conductive mirror region has an opposite conductivity mode from the second conductive mirror region. The first conductive mirror region has a remote surface substantially parallel to the light-generating region and an electrode formed on the remote surface. The electrode bounds a light emission port from which the light is emitted in a direction defining an axis. A reduced-conductivity region is formed in the first conductive mirror region surrounding the axis and extending from the remote surface towards the light-emitting region to define a core region in the first conductive mirror region. The light emission port and/or the core region has first and second dimensions in orthogonal directions in a plane parallel to the light-generating region. The first dimension is greater than the second dimension to set the direction of polarization of the light to the direction of the first dimension.

    摘要翻译： 产生具有固定的偏振方向的光的垂直腔表面发射激光器。 激光器具有夹在第一导电镜区域和第二导电镜面区域之间的平面发光区域。 第一导电镜区域具有与第二导电镜区域相反的导电模式。 第一导电镜区域具有基本上平行于发光区域的远程表面和形成在远程表面上的电极。 电极在限定轴线的方向上限定发光的发光口。 导电区域形成在围绕轴线的第一导电反射镜区域中，并从远程表面朝向发光区域延伸以在第一导电反射镜区域中限定芯区域。 发光端口和/或芯区域在与发光区域平行的平面中具有正交方向上的第一和第二尺寸。 第一尺寸大于第二尺寸以将光的偏振方向设置为第一尺寸的方向。