发明授权
US6060372A Method for making a semiconductor device with improved sidewall junction
capacitance
失效
制造具有改善的侧壁结电容的半导体器件的方法
- 专利标题： Method for making a semiconductor device with improved sidewall junction capacitance
- 专利标题（中）： 制造具有改善的侧壁结电容的半导体器件的方法
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申请号： US823286申请日： 1997-03-21
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公开(公告)号： US6060372A公开(公告)日： 2000-05-09
- 发明人: Michael C. Smayling , Alister C. Young , John A. Rodriguez , Jihong Chen
- 申请人： Michael C. Smayling , Alister C. Young , John A. Rodriguez , Jihong Chen
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/762 ; H01L21/8234 ; H01L21/822 ; H01L21/265
摘要：
A semiconductor device (10) of the present invention has a gate (32) insulatively disposed above the substrate, source and drain regions (36, 38) disposed near the surface in the substrate adjacent opposite sides of the gate (32), and a field oxide region (26) disposed in the surface of the substrate surrounding the source and drain regions (36, 38) and defining an active moat region (20). The channel stop region (24) is disposed below the field oxide region (26) and is spaced from the active moat region (20) with a predetermined spacing.
公开/授权文献
- US5224132A Programmable fractional-N frequency synthesizer 公开/授权日：1993-06-29
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