发明授权
US6064075A Field emission displays with reduced light leakage having an extractor
covered with a silicide nitride formed at a temperature above 1000.degree.
C.
有权
具有降低的漏光的场发射显示器，具有在高于1000℃的温度下形成的硅化物氮化物覆盖的提取器。
- 专利标题： Field emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000.degree. C.
- 专利标题（中）： 具有降低的漏光的场发射显示器，具有在高于1000℃的温度下形成的硅化物氮化物覆盖的提取器。
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申请号： US196263申请日： 1998-11-19
-
公开(公告)号： US6064075A公开(公告)日： 2000-05-16
- 发明人: David A. Cathey, Jr. , John K. Lee , Tianhong Zhang , Behnam Moradi
- 申请人： David A. Cathey, Jr. , John K. Lee , Tianhong Zhang , Behnam Moradi
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01J1/05
- IPC分类号： H01J1/05 ; H01J9/02 ; H01L21/00 ; H01L21/4763 ; H01L29/06
摘要：
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
公开/授权文献
- US5546883A Anchor, anchorfluke and methods for anchoring 公开/授权日：1996-08-20