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1.发明授权Field emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000.degree. C. 有权具有降低的漏光的场发射显示器，具有在高于1000℃的温度下形成的硅化物氮化物覆盖的提取器。
公开(公告)号：US6064075A
公开(公告)日：2000-05-16
申请号：US196263
申请日：1998-11-19
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。
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公开(公告)号：US6024620A
公开(公告)日：2000-02-15
申请号：US196302
申请日：1998-11-19
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
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公开(公告)号：US06228667B1
公开(公告)日：2001-05-08
申请号：US09607563
申请日：2000-06-29
IPC分类号： H01L2100
CPC分类号： H01J3/021 , H01J9/148 , H01J29/467 , H01J31/127 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 硅化物层通过暴露于氮源在高于1000℃的温度下进行处理，硅化物耐受后续的化学侵蚀，例如参与缓冲氧化物蚀刻工艺的化学侵蚀。
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公开(公告)号：US6133056A
公开(公告)日：2000-10-17
申请号：US256882
申请日：1999-02-24
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。
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公开(公告)号：US5956611A
公开(公告)日：1999-09-21
申请号：US922871
申请日：1997-09-03
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
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6.发明授权公开(公告)号：US06507329B2
公开(公告)日：2003-01-14
申请号：US09774812
申请日：2001-01-30
IPC分类号： G09G322
CPC分类号： H01J1/3042 , H01J1/304 , H01J31/127 , H01J2201/319 , H01J2329/00
摘要： A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.
摘要翻译： 用于场发射显示器的半导体器件包括由半导体材料，玻璃，钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。
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公开(公告)号：US06181308B2
公开(公告)日：2001-01-30
申请号：US08701306
申请日：1996-08-21
IPC分类号： G09G322
CPC分类号： H01J1/3042 , H01J1/304 , H01J31/127 , H01J2201/319 , H01J2329/00
摘要： A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.
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8.发明授权Field emission device micropoint with current-limiting resistive structure and method for making same 失效具有限流电阻结构的场发射器件微点及其制造方法
公开(公告)号：US5770919A
公开(公告)日：1998-06-23
申请号：US775843
申请日：1996-12-31
申请人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
发明人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/319 , H01J2329/00
摘要： A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.
摘要翻译： 公开了一种包括基板，形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件（“FED”）的微点组件。 微点组件还包括与特定FED元件相关联的电阻结构，其将电流限制到最大水平并且最小化对器件的剩余元件的影响。 电阻率的任何变化是均匀分布的，因为相同的过程一贯地应用于多个元件位置。
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9.发明授权Method for forming high resistance resistors for limiting cathode current in field emission displays 失效用于形成用于限制场致发射显示器中的阴极电流的高电阻电阻的方法
公开(公告)号：US5585301A
公开(公告)日：1996-12-17
申请号：US502388
申请日：1995-07-14
申请人： John K. Lee , David A. Cathey, Jr. , Kevin Tjaden
发明人： John K. Lee , David A. Cathey, Jr. , Kevin Tjaden
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01L21/02 , H01L21/822 , H01L27/04 , H01L21/70
CPC分类号： H01L28/24 , H01J9/025 , H01L28/20 , H01J2201/319
摘要： A method for forming resistors for regulating current in a field emission display comprises integrating a high resistance resistor into circuitry for the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).
摘要翻译： 用于形成用于调节场致发射显示器中的电流的电阻器的方法包括将高电阻电阻集成到用于场发射显示的电路中。 电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。 高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料 的场发射显示。 在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。 触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。
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公开(公告)号：US5581159A
公开(公告)日：1996-12-03
申请号：US554853
申请日：1995-11-07
CPC分类号： G09G3/006 , G09G3/22 , H01J31/127 , G09G2300/0809 , G09G2310/0248 , G09G3/2011 , G09G3/2014 , H01J2201/319 , Y10S315/07
摘要： A circuit for regulating the pixel current in a field emission display so as to enhance pixel-to-pixel uniformity of pixel current. The pixel current flows through a pair of diodes connected back-to-back. A transistor circuit controls the voltage across the back-to-back diode pair, so that the voltage/current transfer characteristic of the diode pair determines the pixel current.
摘要翻译： 用于调节场发射显示器中的像素电流以增强像素电流的像素到像素均匀性的电路。 像素电流流过一对背对背连接的二极管。 晶体管电路控制背对背二极管对上的电压，使得二极管对的电压/电流传递特性确定像素电流。
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