公开(公告)号：US08447809B2

公开(公告)日：2013-05-21

申请号：US12390565

申请日：2009-02-23

申请人： Rong-Wen Chang ,  John K. Lee ,  Ron Lin

发明人： Rong-Wen Chang ,  John K. Lee ,  Ron Lin

IPC分类号： G06F15/16

CPC分类号： H04L12/1818

摘要： The present invention provides at least an electronic system for network conference. The electronic system includes a user right module for storing and maintaining a plurality of user rights associated to each user of the electronic system, and a meeting right module for creating a meeting having a plurality of meeting rights according to associated user rights of a meeting creator. A participant right module is presented for determining a plurality of participant rights according to the plurality of meeting rights of the meeting and the associated user rights of a participant of the meeting. The system includes a plurality of participant client modules for receiving and sending media stream according to the plurality of participant rights of corresponding participant, and a matrix module for processing and distributing media stream to and from the plurality of participant client modules according to the plurality of participant rights.

摘要翻译： 本发明提供至少一种用于网络会议的电子系统。 电子系统包括用于存储和维护与电子系统的每个用户相关联的多个用户权限的用户权限模块，以及会议权限模块，用于根据会议创建者的相关用户权限创建具有多个会议权限的会议 。 呈现参与者权利模块，用于根据会议的多个会议权限和会议参与者的相关联的用户权限确定多个参与者的权限。 该系统包括多个参与者客户模块，用于根据相应参与者的多个参与者权限接收和发送媒体流;以及矩阵模块，用于根据多个参与者处理和分发媒体流到多个参与者客户模块 参与者权利。

公开(公告)号：US20110223761A1

公开(公告)日：2011-09-15

申请号：US13113468

申请日：2011-05-23

申请人： John K. Lee ,  Hyuntae Kim ,  Richard L. Stocks ,  Luan Tran

发明人： John K. Lee ,  Hyuntae Kim ,  Richard L. Stocks ,  Luan Tran

IPC分类号： H01L21/768 ,  G06F17/50

CPC分类号： H01L21/76816 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for fabricating contacts of semiconductor device structures include forming a dielectric layer over a semiconductor substrate with active-device regions spaced at a first pitch, forming a first plurality of substantially in-line apertures over every second active-device region of the active-device regions, and forming a second plurality of substantially in-line apertures laterally offset from apertures of the first plurality over active-device regions over which apertures of the first plurality are not located. Methods for designing semiconductor device structures include forming at least two laterally offset sets of contacts over a substrate including active-device regions at a first pitch, the contacts being formed at a second pitch that is about twice the first pitch.

摘要翻译： 用于制造半导体器件结构的触点的方法包括在半导体衬底上形成介电层，所述有源器件区域以第一间距隔开，在有源器件的每个第二有源器件区域上形成第一多个基本上一字排列的孔 并且形成第二多个基本上在线的孔，所述第二多个基本上在线的孔横向偏离所述第一多个的主动装置区域上的所述第一多个孔的孔不在其上的位置。 设计半导体器件结构的方法包括在包括有源器件区的第一间距的衬底上形成至少两个横向偏移的触点组，所述触点以大约是第一间距的两倍的第二间距形成。

公开(公告)号：US20090213728A1

公开(公告)日：2009-08-27

申请号：US12390574

申请日：2009-02-23

申请人： Rong-Wen Chang ,  John K. Lee ,  Ron Lin

发明人： Rong-Wen Chang ,  John K. Lee ,  Ron Lin

IPC分类号： G06F11/00

CPC分类号： H04L1/0057 ,  H04L1/0071

摘要： Apparatus and method for packet redundancy and recovery are disclosed. In a transmitter, parity packets are generated by executing exclusive OR between the corresponding data packets, and are transmitted along with the data packets to a receiver. In the receiver, lost data packets are found out and are recovered by executing exclusive OR between the corresponding data packets and the corresponding parity packets. This invention enhances the reliability of streaming data transmission using loss-recovery packets. Data packets are grouped and transmitted with redundant packets to allow the receiver to recover a lost packet within the group. This will minimize the need and therefore the time and delay to request a retransmission of the damaged or lost packets.

摘要翻译： 公开了用于分组冗余和恢复的装置和方法。 在发射机中，通过在对应的数据分组之间执行异或来产生奇偶校验分组，并且与数据分组一起传送到接收机。 在接收机中，发现丢失的数据包，并通过执行相应的数据包和对应的奇偶校验包之间的异或来恢复。 本发明增强了使用丢失恢复分组的流数据传输的可靠性。 数据分组被分组并用冗余分组传输，以允许接收机恢复组内的丢失分组。 这将最小化需求，并因此最小化请求重传损坏或丢失的数据包的时间和延迟。

公开(公告)号：US07098587B2

公开(公告)日：2006-08-29

申请号：US10400732

申请日：2003-03-27

申请人： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

发明人： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J1/02 ,  H01J5/50 ,  G09G3/10

CPC分类号： H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

摘要： An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device are disclosed. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

摘要翻译： 公开了用于稳定有源矩阵场致发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US06372530B1

公开(公告)日：2002-04-16

申请号：US09116828

申请日：1998-07-16

申请人： John K. Lee

发明人： John K. Lee

IPC分类号： H01L2100

CPC分类号： H01J3/022 ,  H01J2329/00

摘要： A cold-cathode emitter includes a high-voltage tank of a second conductivity that is formed in a substrate having a fast conductivity. An emitter tip is integral with the tank and extends outwardly from the substrate. The tank forms either a drain region or a collector region of a transistor. A cold-cathode emitter device includes a drive transistor formed in a substrate of a s conductivity. The transistor includes an electron receive region of a second conductivity. An emitter tip is integral with the electron receive region and extends outwardly from the substrate.

摘要翻译： 冷阴极发射器包括形成在具有快导电性的衬底中的第二导电性的高压罐。 发射器尖端与罐形成一体，并从衬底向外延伸。 该槽形成晶体管的漏极区域或集电极区域。 冷阴极发射器件包括形成在导电性的衬底中的驱动晶体管。 晶体管包括具有第二导电性的电子接收区域。 发射极尖端与电子接收区域成一体并从衬底向外延伸。

公开(公告)号：US06176752B1

公开(公告)日：2001-01-23

申请号：US09152772

申请日：1998-09-10

申请人： Kevin Tjaden ,  David A. Cathey ,  John K. Lee

发明人： Kevin Tjaden ,  David A. Cathey ,  John K. Lee

IPC分类号： H01J900

CPC分类号： H01J9/025

摘要： The present invention is a baseplate that has a supporting substrate with a primary surface upon which an array of emitters is formed. An insulator layer with a plurality of cavities aligned with respective emitters is disposed on the primary surface, and an extraction grid with a plurality of cavity openings aligned with respective emitters is deposited on the insulator layer. The extraction grid is made from a silicon based layer of material. A current control substrate formed from the silicon based layer of material of the extraction grid is provided such that the current control substrate is electrically isolated from the extraction grid and electrically connected to the emitters. The current control substrate has sufficient resistivity to limit the current from the emitters.

公开(公告)号：US5911615A

公开(公告)日：1999-06-15

申请号：US779405

申请日：1997-01-07

申请人： Kevin Tjaden ,  John K. Lee

发明人： Kevin Tjaden ,  John K. Lee

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.

摘要翻译： 专门用于制造场发射极器件的方法专门用于在掺杂半导体衬底中形成电子发射器尖端。 该方法包括以下步骤：在基板的发射极区域周围形成凹陷; 在凹陷中掺杂衬底; 并将凹陷中的掺杂剂膨胀到发射极区域中。

公开(公告)号：US5880502A

公开(公告)日：1999-03-09

申请号：US709425

申请日：1996-09-06

申请人： John K. Lee ,  Behnam Moradi ,  Michael J. Westphal

发明人： John K. Lee ,  Behnam Moradi ,  Michael J. Westphal

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/82385 ,  H01L27/0922 ,  H01L29/1087 ,  H01L29/4916 ,  H01L29/7835

摘要： CMOS devices and process for fabricating low voltage, high voltage, or both low voltage and high voltage CMOS devices are disclosed. According to the process, p-channel stops and source/drain regions of PMOS devices are implanted into a substrate in a single step. Further, gates for both NMOS and PMOS devices are doped with n-type dopant and NMOS gates are self-aligned.

公开(公告)号：US5641706A

公开(公告)日：1997-06-24

申请号：US599440

申请日：1996-01-18

申请人： Kevin Tjaden ,  John K. Lee

发明人： Kevin Tjaden ,  John K. Lee

IPC分类号： H01J9/02 ,  H01L21/22

CPC分类号： H01J9/025

摘要： A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.

摘要翻译： 专门用于制造场发射极器件的方法专门用于在掺杂半导体衬底中形成电子发射器尖端。 该方法包括以下步骤：在基板的发射极区域周围形成凹陷; 在凹陷中掺杂衬底; 并将凹陷中的掺杂剂膨胀到发射极区域中。

公开(公告)号：US5638086A

公开(公告)日：1997-06-10

申请号：US458853

申请日：1995-06-02

申请人： John K. Lee ,  Glen Hush

发明人： John K. Lee ,  Glen Hush

IPC分类号： G09G3/00 ,  G09G3/20 ,  G09G3/22 ,  H01J31/12

CPC分类号： G09G3/006 ,  G09G3/22 ,  H01J31/127 ,  G09G2300/0809 ,  G09G2310/0248 ,  G09G3/2011 ,  G09G3/2014 ,  H01J2201/319

摘要： A display is arranged in rows and columns with a current source for each column instead of a current source in each display cell. By omitting the current source from the cell, smaller display cell geometries are achieved. In a display where one row is selected at a time, the display of the present invention with smaller circuitry achieves performance identical to the prior art. Application is made to flat panel displays generally including field emission displays, liquid crystal displays, and integrated light emitting diode array displays.

摘要翻译： 显示器以行和列排列，每个列的当前源代替每个显示单元中的当前源。 通过从电池省略电流源，实现更小的显示单元几何形状。 在一次选择一行的显示器中，具有较小电路的本发明的显示实现与现有技术相同的性能。 通常应用于平板显示器，包括场致发射显示器，液晶显示器和集成发光二极管阵列显示器。