发明授权
US6080526A Integration of low-k polymers into interlevel dielectrics using
controlled electron-beam radiation
失效
使用受控电子束辐射将低k聚合物集成到层间电介质中
- 专利标题: Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
- 专利标题(中): 使用受控电子束辐射将低k聚合物集成到层间电介质中
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申请号: US28465申请日: 1998-02-24
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公开(公告)号: US6080526A公开(公告)日: 2000-06-27
- 发明人: Jingjun Yang , Lynn Forester , Dong Kyu Choi , Shi-Qing Wang , Neil H. Hendricks
- 申请人: Jingjun Yang , Lynn Forester , Dong Kyu Choi , Shi-Qing Wang , Neil H. Hendricks
- 申请人地址: NJ Morristown
- 专利权人: AlliedSignal Inc.
- 当前专利权人: AlliedSignal Inc.
- 当前专利权人地址: NJ Morristown
- 主分类号: C08J3/28
- IPC分类号: C08J3/28 ; G03F7/26 ; H01L21/312 ; H01L21/316 ; H01L21/768 ; G03F7/40
摘要:
A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
公开/授权文献
- USD370734S Lantern 公开/授权日:1996-06-11
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