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    Methods for chemical mechanical polish of organic polymer dielectric films
    8.
    发明授权
    Methods for chemical mechanical polish of organic polymer dielectric films 失效
    有机聚合物电介质薄膜的化学机械抛光方法

    公开(公告)号：US6153525A

    公开(公告)日：2000-11-28

    申请号：US023415

    申请日：1998-02-13

    申请人： Neil H. Hendricks ,  Daniel L. Towery

    发明人： Neil H. Hendricks ,  Daniel L. Towery

    IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/312

    CPC分类号： H01L21/31053 ,  H01L2924/00013

    摘要： A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer. In this way, the chemical mechanical polishing removal rate is increased compared to the removal rate for a fully cured polymer film.

    摘要翻译： 用于在半导体衬底上形成和平坦化聚合物介电膜并在平坦化这些膜时实现高化学机械抛光去除速率的方法。 通过（a）将聚合物电介质膜组合物沉积到半导体衬底的表面上，在半导体衬底上产生固化的全局平面化的聚合物电介质薄膜; （b）部分固化沉积膜; （c）对所述部分固化的电介质膜进行化学机械抛光步骤，直到所述电介质膜基本平坦化; 和（d）对经抛光的膜进行另外的固化步骤。 优选的电介质膜是通过旋涂法沉积到半导体衬底上的聚亚芳基醚和/或氟化聚亚芳基醚聚合物。 热处理部分固化聚合物。 化学机械抛光步骤实现全局平坦化。 另一种热处理完成聚合物的最终固化。 以这种方式，与完全固化的聚合物膜的去除速率相比，化学机械抛光去除速率增加。