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    Methods of and Formulations for Reducing and Inhibiting the Growth of the Concentration of Microbes in Water-Based Fluids and Systems Used with Them
    2.
    发明申请
    Methods of and Formulations for Reducing and Inhibiting the Growth of the Concentration of Microbes in Water-Based Fluids and Systems Used with Them 有权
    用于减少和抑制水基液体和系统中微生物浓度生长的方法和配方

    公开(公告)号：US20100298275A1

    公开(公告)日：2010-11-25

    申请号：US12669657

    申请日：2008-07-21

    Applicant: Bei Yin ,  Jingjun Yang

    Inventor： Bei Yin ,  Jingjun Yang

    IPC: A01N57/20 ,  A01P1/00

    CPC classification number: C10M173/00 ,  A01N35/02 ,  C02F1/50 ,  C09D5/14 ,  C10M141/10 ,  C10M2207/08 ,  C10M2215/16 ,  C10M2215/202 ,  C10M2215/22 ,  C10M2219/104 ,  C10M2223/06 ,  C10N2230/16 ,  C10N2240/40 ,  A01N57/34 ,  A01N57/20 ,  A01N2300/00

    Abstract: The present invention provides methods and formulations for reducing or inhibiting increase in the concentration of microbes in a water-based fluid. The methods and formulations of the present invention use glutaraldehyde and a hydroxymethyl-substituted phosphorus compound selected from the group consisting of tetrakis(hydroxymethyl)phosphonium salts, C1-C3 alkyl- and alkenyltris(hydroxymethyl)phosphonium salts and tris(hydroxymethyl)phosphine, in a ratio of hydroxymethyl-substituted phosphorus compound to glutaraldehyde in the range of about 2:1 to about 7:1, or about 3.5:1 to about 7.5:1. The methods and formulations of the present invention can be useful in treating water contaminated with aerobic or anaerobic bacteria in oilfield, natural gas field and other industrial applications.

    Abstract translation: 本发明提供用于减少或抑制水基流体中微生物浓度增加的方法和制剂。 本发明的方法和制剂使用戊二醛和选自四（羟甲基）鏻盐，C 1 -C 3烷基 - 和链烯基三（羟甲基）鏻盐和三（羟甲基）膦）中的羟甲基取代的磷化合物， 羟甲基取代的磷化合物与戊二醛的比例在约2:1至约7:1或约3.5:1至约7.5:1的范围内。 本发明的方法和制剂可用于处理油田，天然气田等工业应用中有氧或厌氧菌污染的水。

    ELECTRON BEAM MODIFICATION OF CVD DEPOSITED LOW DIELECTRIC CONSTANT MATERIALS
    3.
    发明申请
    ELECTRON BEAM MODIFICATION OF CVD DEPOSITED LOW DIELECTRIC CONSTANT MATERIALS 审中-公开
    CVD沉积低介电常数材料的电子束修改

    公开(公告)号：US20080095951A1

    公开(公告)日：2008-04-24

    申请号：US11957941

    申请日：2007-12-17

    Applicant: MATTHEW ROSS ,  Heiki Thompson ,  Jingjun Yang

    Inventor： MATTHEW ROSS ,  Heiki Thompson ,  Jingjun Yang

    IPC: B05D3/06

    CPC classification number: C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/314 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/318

    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

    Abstract translation: 一种用于形成用于生产微电子器件的低介电常数介电膜的方法。 通过化学气相沉积在化学气相沉积设备中的单体或低聚物电介质前体或在设备中由前体形成的反应产物，在基底上形成电介质层，以在基底上形成层 基质。 在任选地在足够的时间和温度下加热该层以干燥该层，然后将该层暴露于电子束辐射足够长的时间，温度，电子束能量和电子束剂量以修饰该层。 电子束曝光步骤通过用来自大面积电子束源的宽大的大束电子束辐射来全面暴露电介质层来进行。

    Electron beam modification of CVD deposited films, forming low dielectric constant materials
    6.
    发明授权
    Electron beam modification of CVD deposited films, forming low dielectric constant materials 失效
    CVD沉积膜的电子束修饰，形成低介电常数材料

    公开(公告)号：US07309514B2

    公开(公告)日：2007-12-18

    申请号：US10342459

    申请日：2003-01-14

    Applicant: Matthew Ross ,  Heike Thompson ,  Jingjun Yang

    Inventor： Matthew Ross ,  Heike Thompson ,  Jingjun Yang

    IPC: C23C16/22

    CPC classification number: C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/314 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/318

    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

    Abstract translation: 一种用于形成用于生产微电子器件的低介电常数介电膜的方法。 通过化学气相沉积在化学气相沉积设备中的单体或低聚物电介质前体或在设备中由前体形成的反应产物，在基底上形成电介质层，以在基底上形成层 基质。 在任选地在足够的时间和温度下加热该层以干燥该层，然后将该层暴露于电子束辐射足够长的时间，温度，电子束能量和电子束剂量以修饰该层。 电子束曝光步骤通过用来自大面积电子束源的宽大的大束电子束辐射来全面暴露电介质层来进行。

    Electron beam treatment of siloxane resins
    8.
    发明授权
    Electron beam treatment of siloxane resins 失效
    硅氧烷树脂的电子束处理

    公开(公告)号：US06177143B1

    公开(公告)日：2001-01-23

    申请号：US09226347

    申请日：1999-01-06

    Applicant: Carl Treadwell ,  Jingjun Yang ,  Matthew Ross

    Inventor： Carl Treadwell ,  Jingjun Yang ,  Matthew Ross

    IPC: C08F248

    CPC classification number: H01L21/02126 ,  B05D3/068 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/3122

    Abstract: Electron beam cured siloxane dielectric films and to a process for their manufacture which are useful in the production of integrated circuits. A siloxane polymer having in one aspect less than 40 Mole percent carbon containing substituents, and in another aspect at least approximately 40 Mole percent carbon containing substituents is cured by a wide beam electron beam exposure.

    Abstract translation: 电子束固化的硅氧烷介电膜及其制造方法，其可用于集成电路的生产。 具有一个方面的硅氧烷聚合物通过宽束电子束曝光固化，其一方面小于40摩尔％的含碳取代基，另一方面至少约40摩尔％的含碳取代基固化。

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