Invention Grant
US6091618A Method and circuitry for storing discrete amounts of charge in a single
memory element
失效
用于在单个存储元件中存储离散量的电荷的方法和电路
- Patent Title: Method and circuitry for storing discrete amounts of charge in a single memory element
- Patent Title (中): 用于在单个存储元件中存储离散量的电荷的方法和电路
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Application No.: US910761Application Date: 1997-08-13
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Publication No.: US6091618APublication Date: 2000-07-18
- Inventor: Albert Fazio , Gregory E. Atwood , James Q. Mi
- Applicant: Albert Fazio , Gregory E. Atwood , James Q. Mi
- Applicant Address: CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: CA Santa Clara
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C11/56 ; G11C16/02 ; G11C27/00 ; G11C13/00
Abstract:
A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.
Public/Granted literature
- USD305753S Computer Public/Granted day:1990-01-30
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