- 专利标题： Semiconductor device and a method of manufacturing thereof
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申请号： US882300申请日： 1997-06-25
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公开(公告)号： US6097052A公开(公告)日： 2000-08-01
- 发明人: Yoshinori Tanaka , Mitsuya Kinoshita , Shinya Watanabe , Tatsuo Kasaoka , Moriaki Akazawa , Toshiaki Ogawa
- 申请人： Yoshinori Tanaka , Mitsuya Kinoshita , Shinya Watanabe , Tatsuo Kasaoka , Moriaki Akazawa , Toshiaki Ogawa
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-318572 19921127; JPX5-002692 19930111; JPX5-240646 19930831
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/283 ; H01L21/302 ; H01L21/3065 ; H01L21/768 ; H01L21/8242 ; H01L23/522 ; H01L27/10 ; H01L27/108
摘要：
A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.
公开/授权文献
- US5200318A Diagnosis of IDDM with a panel of immunoreagents 公开/授权日：1993-04-06
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