发明授权
US6097196A Non-contact tunnelling field measurement for a semiconductor oxide layer
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用于半导体氧化物层的非接触隧道场测量
- 专利标题： Non-contact tunnelling field measurement for a semiconductor oxide layer
- 专利标题（中）： 用于半导体氧化物层的非接触隧道场测量
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申请号： US841501申请日： 1997-04-23
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公开(公告)号： US6097196A公开(公告)日： 2000-08-01
- 发明人: Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
- 申请人： Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
- 专利权人： Verkuil; Roger L.,Horner; Gregory S.,Miller; Tom G.
- 当前专利权人： Verkuil; Roger L.,Horner; Gregory S.,Miller; Tom G.
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; G01R31/28
摘要：
A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.
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