Invention Grant
- Patent Title: Sensitive technique for metal-void detection
- Patent Title (中): 金属空隙检测的敏感技术
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Application No.: US179172Application Date: 1998-10-27
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Publication No.: US6100101APublication Date: 2000-08-08
- Inventor: Amit P. Marathe , Nguyen D. Bui , Van Pham
- Applicant: Amit P. Marathe , Nguyen D. Bui , Van Pham
- Applicant Address: CA Sunnyvale
- Assignee: Advanced Micro Devices Inc.
- Current Assignee: Advanced Micro Devices Inc.
- Current Assignee Address: CA Sunnyvale
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
A categorization of a particular semiconductor wafer based on void size is obtained from sigma data and T0.1% failure data that has been obtained from wafers subjected to isothermal testing. The sigma data and the T0.1% failure data for the particular wafer is compared to stored data corresponding to ranges for sigma and T0.1% data for each of a plurality of void categories, and the particular wafer is categorized based on the stored data. The T0.1% failure data is computed based on a T50% failure data and the sigma value, so that small sample sizes can be utilized to obtain the stored data.
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