发明授权
- 专利标题: Sensitive technique for metal-void detection
- 专利标题(中): 金属空隙检测的敏感技术
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申请号: US179172申请日: 1998-10-27
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公开(公告)号: US6100101A公开(公告)日: 2000-08-08
- 发明人: Amit P. Marathe , Nguyen D. Bui , Van Pham
- 申请人: Amit P. Marathe , Nguyen D. Bui , Van Pham
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices Inc.
- 当前专利权人: Advanced Micro Devices Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A categorization of a particular semiconductor wafer based on void size is obtained from sigma data and T0.1% failure data that has been obtained from wafers subjected to isothermal testing. The sigma data and the T0.1% failure data for the particular wafer is compared to stored data corresponding to ranges for sigma and T0.1% data for each of a plurality of void categories, and the particular wafer is categorized based on the stored data. The T0.1% failure data is computed based on a T50% failure data and the sigma value, so that small sample sizes can be utilized to obtain the stored data.
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