High integrity ultra-shallow source/drain junctions are formed employing cobalt silicide contacts. Field oxide regions, gates, spacers, and source/drain implants are initially formed. A layer of silicon is then deposited. A protective non-contuctive film is then formed and anisotropically etched to expose the silicon layer on the source/drain regions and the top surfaces of the gates, and to form protective spacers on the edges of the field oxide regions and on the side surfaces of the gates. A layer of cobalt is thereafter deposited and silicidation is performed, as by rapid thermal annealing, to form a low-resistance cobalt silicide while consuming the silicon film. The consumption of the silicon film during silicidation results in less consumption of substrate silicon, thereby enabling the formation of ultra-shallow source/drain junctions without junction leakage, allowing the formation of cobalt silicide contacts at optimum thickness and facilitating reliable device scaling.