发明授权
US6103601A Method and apparatus for improving film stability of halogen-doped
silicon oxide films
有权
用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
- 专利标题： Method and apparatus for improving film stability of halogen-doped silicon oxide films
- 专利标题（中）： 用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
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申请号： US330247申请日： 1999-06-10
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公开(公告)号： US6103601A公开(公告)日： 2000-08-15
- 发明人: Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
- 申请人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; C23C16/40 ; C23C16/56 ; H01L21/31 ; H01L21/3105 ; H01L21/316 ; H01L23/522 ; H01L21/425 ; H01L21/469
摘要：
A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.
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