发明授权
- 专利标题: Thermoelectric system using semiconductor
- 专利标题(中): 使用半导体的热电系统
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申请号: US181908申请日: 1998-10-29
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公开(公告)号: US6107645A公开(公告)日: 2000-08-22
- 发明人: Norio Hidaka
- 申请人: Norio Hidaka
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX9-300717 19971031
- 主分类号: H01L31/10
- IPC分类号: H01L31/10 ; H01L33/12 ; H01L33/22 ; H01L35/00 ; H01L35/14 ; H01L35/32 ; H02N11/00 ; H01L33/00
摘要:
A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.
公开/授权文献
- US4333977A Wear-resistant article 公开/授权日:1982-06-08
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