公开(公告)号：US06672021B2

公开(公告)日：2004-01-06

申请号：US09900909

申请日：2001-07-09

申请人： Mitsugi Kusano ,  Kimio Numaguchi ,  Norio Hidaka ,  Yasuhiro Takagi ,  Tetsuji Nagaoka ,  Nobuyuki Miyanaga

发明人： Mitsugi Kusano ,  Kimio Numaguchi ,  Norio Hidaka ,  Yasuhiro Takagi ,  Tetsuji Nagaoka ,  Nobuyuki Miyanaga

IPC分类号： E06B104

CPC分类号： E06B1/526 ,  E05D7/02 ,  E05Y2900/132

摘要： A door assembly allows one to easily and freely change a hinged side and an opening direction of a door when or after a resident moves into a house. Detachable inner frames having doorstop portions, flat portions, and locking nails are mounted to locking grooves in left and right vertical outer frames around spacers and a door main body is mounted to a heelpost side flat portion through hinges. By dividing a doorframe into the vertical outer frames and the inner frames, in order to change a hinged side of the door, the inner frames are pulled out from the vertical outer frames and inserted into the locking grooves in the vertical outer frames after changing orientation of the inner frames according to the hinged side or exchanging the inner frames for the inner frames suitable for the hinged side and the opening direction to thereby easily change the hinged side of the door main body.

摘要翻译： 门组件允许在居民移动到房屋中或之后容易且自由地改变门的铰接侧和开口方向。 具有门台部分，平坦部分和锁定钉的可拆卸内框架安装在围绕隔片的左右垂直外框架中的锁定槽上，并且门主体通过铰链安装到脚后跟侧平坦部分。 通过将门框分成垂直外框架和内框架，为了改变门的铰接侧，内框架从垂直外框架拉出并且在改变方向之后插入垂直外框架中的锁定槽中 或更换适于铰链侧和开口方向的内框架的内框架，从而容易地改变门主体的铰接侧。

公开(公告)号：US4908694A

公开(公告)日：1990-03-13

申请号：US571542

申请日：1983-12-20

申请人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

发明人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/12 ,  H01L23/498 ,  H01L23/66 ,  H01P3/08

CPC分类号： H01L23/66 ,  H01L23/49844 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/15173 ,  H01L2924/3011

摘要： A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive layer thereon. The insulator base and the conductive layer are integrated with the insulator base and the combination is insertingly engaged with the through-passage of the metal base. A semiconductor element is fixed in the metal case, in which a pseudo-coaxial line structure is formed by the conductive layer, the insulator base, the insulator bridge and the metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

摘要翻译： PCT No.PCT / JP83 / 00129 Sec。 371日期：1983年12月20日 102（e）1983年12月20日日期PCT提交1983年4月26日PCT公布。 出版物WO83 / 0392200 日期：1983年11月10日。一种半导体器件，包括金属基底，金属壳体和连接金属壳体的内部和外部的通路，提供选择性地沉积在绝缘体基底上的电桥的电端子，允许形成导电 层上。 绝缘子基体和导电层与绝缘体基体一体化，并且组合物与金属基底的通道插入接合。 半导体元件固定在金属壳体中，其中通过导电层，绝缘体基底，绝缘体桥和金属壳形成伪同轴线结构。 因此，本发明的装置即使在10GHz以上的频率也能够稳定地进行动作。

公开(公告)号：US06329231B1

公开(公告)日：2001-12-11

申请号：US09579271

申请日：2000-05-26

申请人： Norio Hidaka

发明人： Norio Hidaka

IPC分类号： H01L21338

CPC分类号： H01L29/7783 ,  H01L23/4821 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An active element has first and second regions and a control electrode. Carriers move between the first and second regions in a first direction. A motion of carriers is controlled by an electric signal applied to the control electrode. The first and second regions and control electrode extend in a second direction crossing the first direction from an input terminal to an output terminal. A conductive region is electrically connected to the first region from the input terminal to the output terminal. A trigger line extending in the second direction propagates an electric signal from the input terminal to the output terminal. The electric signal propagating the trigger line is applied to the control electrode at a corresponding position in the second direction. An output line extending in the second direction propagates an electric signal from the input terminal to the output terminal. An electric signal propagating on the output line is excited by carriers moving through the active element in the first direction.

摘要翻译： 有源元件具有第一和第二区域和控制电极。 载体在第一方向上在第一和第二区域之间移动。 载体的运动由施加到控制电极的电信号控制。 第一和第二区域和控制电极沿与第一方向交叉的第二方向从输入端子延伸到输出端子。 导电区域与从输入端子到输出端子的第一区域电连接。 沿第二方向延伸的触发线将电信号从输入端传播到输出端。 传播触发线的电信号在第二方向的相应位置处施加到控制电极。 在第二方向上延伸的输出线将电信号从输入端子传播到输出端子。 在输出线上传播的电信号被沿着第一方向移动通过有源元件的载流子激发。

公开(公告)号：US6107645A

公开(公告)日：2000-08-22

申请号：US181908

申请日：1998-10-29

申请人： Norio Hidaka

发明人： Norio Hidaka

IPC分类号： H01L31/10 ,  H01L33/12 ,  H01L33/22 ,  H01L35/00 ,  H01L35/14 ,  H01L35/32 ,  H02N11/00 ,  H01L33/00

CPC分类号： H01L33/62 ,  H01L33/645 ,  H01L35/00 ,  H01L35/32 ,  H01L2924/0002 ,  Y10S257/93

摘要： A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.

摘要翻译： 在第一热电半导体部件中划定冷端和热端。 由金属或半导体制成的第一部件连接到第一热电半导体部件的冷端。 第一构件由其中当从包括电子或空穴的第一载体从第一构件注入第一热电半导体构件时发生热吸收的材料制成。 传送到第一热电半导体部件的热端的第一载体被聚集在发光区域中。 发光区域由半导体材料制成。 在该发光区域中，由于电子和空穴之间的复合发生光发射。

公开(公告)号：US5023703A

公开(公告)日：1991-06-11

申请号：US448858

申请日：1989-12-12

申请人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

发明人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/12 ,  H01L23/498 ,  H01L23/66 ,  H01P3/08

CPC分类号： H01L23/66 ,  H01L23/49844 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/15173 ,  H01L2924/3011

摘要： A semiconductor device comprising a metal base providing a metal case and a through-passage connecting the inside and outside of said metal case, an electric terminal which provides a bridge selectively deposited on the insulator base allowing formation of conductive layer thereon, said insulator base and said conductive layer and is integrated with said insulator base and is insertingly engaged with the through-passage of said metal base, and a semiconductor element accommodated in said metal case, wherein a pseudo-coaxial line structure is composed of said conductive layer, insulator base, insulator bridge and metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

公开(公告)号：US4427991A

公开(公告)日：1984-01-24

申请号：US206543

申请日：1980-08-20

申请人： Shigeyuki Yamamura ,  Kinjiro Kosemura ,  Takao Shima ,  Norio Hidaka

发明人： Shigeyuki Yamamura ,  Kinjiro Kosemura ,  Takao Shima ,  Norio Hidaka

IPC分类号： H01L21/822 ,  H01L23/047 ,  H01L23/057 ,  H01L23/12 ,  H01L23/50 ,  H01L23/66 ,  H01L25/16 ,  H01L27/04 ,  H01L23/02

CPC分类号： H01L23/047 ,  H01L23/057 ,  H01L23/66 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2924/01079

摘要： A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function element which includes at least one semiconductor and other circuit elements necessary for forming a functional amplifier, a DC power circuit for operating the device and high frequency circuits for connecting to corresponding high frequency devices. This device also consists of a metal base substrate, which is used for anchoring the device and mounting other parts of the device thereon, an insulating substrate having a plurality of independent metallized layers used as external contacts and a sealing part for hermetically sealing that part of the insulating substrate which mounts and encloses the function element. The overall shape and structure of the device is such so as to minimize the size of the hermetic seal required to seal any semiconductors in the function element while also minimizing the total size of the device. The device is constructed with external contacts to facilitate alignment in close proximity with corresponding devices for the purpose of forming a cascade amplifier.

摘要翻译： PCT No.PCT / JP79 / 00323 Sec。 371日期1980年8月26日 102（e）日期1980年8月20日PCT提交1979年12月22日PCT公布。 出版物WO80 / 01437 日期1980年7月10日。一种高频，密封的半导体器件，其能够以有利的方式与对应的器件级联连接。 该装置包括功能元件，其包括形成功能放大器所需的至少一个半导体和其它电路元件，用于操作该器件的DC电源电路和用于连接到相应的高频器件的高频电路。 该装置还包括金属基底基底，其用于锚固装置并安装其上的装置的其它部分，具有用作外部触点的多个独立金属化层的绝缘基底和用于气密地密封该部分的密封部分 绝缘基板，其安装并包围功能元件。 装置的整体形状和结构使得密封功能元件中的任何半导体所需的气密密封的尺寸最小化，同时最小化装置的总尺寸。 该器件由外部触点构成，以便于与相应的器件紧密配合以形成级联放大器。