发明授权
- 专利标题： Low resistive tantalum thin film structure and method for forming the same
- 专利标题（中）： 低电阻钽薄膜结构及其形成方法
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申请号： US178534申请日： 1998-10-26
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公开(公告)号： US6110598A公开(公告)日： 2000-08-29
- 发明人: Akitoshi Maeda , Hideo Murata , Eiji Hirakawa
- 申请人： Akitoshi Maeda , Hideo Murata , Eiji Hirakawa
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： NEC Corporation,Hitachi Metals, Ltd.
- 当前专利权人： NEC Corporation,Hitachi Metals, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX7-158411 19950531
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; C23C14/06 ; C23C14/18 ; C23C14/34 ; G02F1/1343 ; H01B5/14 ; H01B13/00 ; H01L21/00 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L21/316 ; H01L21/3205 ; H01L21/336 ; H01L21/768 ; H01L23/52 ; B32B9/00
摘要：
A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.
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