发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US194733申请日: 1998-12-02
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公开(公告)号: US6110755A公开(公告)日: 2000-08-29
- 发明人: Shigetsugu Muramatsu , Hiroshi Miyagawa
- 申请人: Shigetsugu Muramatsu , Hiroshi Miyagawa
- 申请人地址: JPX Nagano
- 专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人地址: JPX Nagano
- 优先权: JPX9-084907 19970403
- 主分类号: H01L23/28
- IPC分类号: H01L23/28 ; H01L21/56 ; H01L21/98 ; H01L23/12 ; H01L23/13 ; H01L23/24 ; H01L23/31 ; H05K1/02 ; H01L21/00
摘要:
A method for producing semiconductor devices by mounting semiconductor chips 12 on a substrate 20 and resin-encapsulated the same is provided, wherein a plurality of semiconductor devices having a high reliability are simultaneously and efficiently obtained from a single large-sized substrate, comprising the steps of mounting a plurality of semiconductor chips 12 on the large-sized substrate 20 in correspondence to a plurality of unit substrates 20a formed thereon; resin-encapsulating the semiconductor chips 12 by filling a encapsulating resin 16 in the inside of the outer peripheral edge of the large-sized substrate 20; and cutting the large-sized substrate 20 thus resin-encapsulated together with the encapsulating resin 16 into individual unit substrates to obtain a plurality of resin-encapsulated semiconductor devices.
公开/授权文献
- US5466428A Morphologically improved ceric oxide particulates 公开/授权日:1995-11-14
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