发明授权
- 专利标题: Process for producing a carbon film on a substrate
- 专利标题(中): 在基材上制造碳膜的方法
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申请号: US349936申请日: 1999-07-08
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公开(公告)号: US6136160A公开(公告)日: 2000-10-24
- 发明人: Pavol Hrkut , Peter Hudek , Ivaylo W. Rangelow , Hans Loschner
- 申请人: Pavol Hrkut , Peter Hudek , Ivaylo W. Rangelow , Hans Loschner
- 申请人地址: ATX Vienna DEX Kassel SKX Bratislava
- 专利权人: IMS Ionen-Mikrofabrikations Systeme GmbH,Universitat Gesamthochschule Kassel,Ustav Pocitacovych systemov, Slovenska adademia vled
- 当前专利权人: IMS Ionen-Mikrofabrikations Systeme GmbH,Universitat Gesamthochschule Kassel,Ustav Pocitacovych systemov, Slovenska adademia vled
- 当前专利权人地址: ATX Vienna DEX Kassel SKX Bratislava
- 优先权: ATX1190/98 19980709
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C23C14/06 ; C23C14/35 ; C23C14/58 ; C23C14/00
摘要:
In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.
公开/授权文献
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