公开(公告)号：US6136160A

公开(公告)日：2000-10-24

申请号：US349936

申请日：1999-07-08

申请人： Pavol Hrkut ,  Peter Hudek ,  Ivaylo W. Rangelow ,  Hans Loschner

发明人： Pavol Hrkut ,  Peter Hudek ,  Ivaylo W. Rangelow ,  Hans Loschner

IPC分类号： C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  C23C14/58 ,  C23C14/00

CPC分类号： C23C14/5806 ,  B82Y30/00 ,  C23C14/0605 ,  C23C14/35

摘要： In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

摘要翻译： 为了处理碳膜，通过溅射从碳溅射靶在含有最小比例的20％的氮气和预定气体压力的溅射气体的气体混合物中将碳碳沉积在基底上，然后将基底在 在高于100℃的温度下进行热处理的高真空。以这种方式制造的碳膜包括基本垂直于膜延伸的纤维和/或管结构。