发明授权
- 专利标题： Semiconductor wafer and method of manufacturing same
- 专利标题（中）： 半导体晶片及其制造方法
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申请号： US84006申请日： 1998-05-26
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公开(公告)号： US6140213A公开(公告)日： 2000-10-31
- 发明人: Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
- 申请人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPXPO5-095388 19930330; JPXPO6-023145 19940125
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/265 ; H01L21/322 ; H01L27/148 ; H01L29/167 ; H01L29/36 ; H01L21/205
摘要：
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
公开/授权文献
- USD410381S Edge protector 公开/授权日：1999-06-01
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