Invention Grant
- Patent Title: Low temperature process for post-etch defluoridation of metals
- Patent Title (中): 金属蚀刻后氟化的低温工艺
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Application No.: US988570Application Date: 1997-12-11
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Publication No.: US6140243APublication Date: 2000-10-31
- Inventor: Robert M. Wallace , Peijun Chen , S. Charles Baber , Steven A. Henck
- Applicant: Robert M. Wallace , Peijun Chen , S. Charles Baber , Steven A. Henck
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L21/027 ; H01L21/304 ; H01L21/3065 ; H01L21/3105 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/311
Abstract:
An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.
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