发明授权
- 专利标题: Method of manufacturing semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件的制造方法
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申请号: US845398申请日: 1997-04-24
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公开(公告)号: US6147001A公开(公告)日: 2000-11-14
- 发明人: Takeshi Kimura , Hidefumi Ito , Hiroyuki Kojima , Nobuhiro Konishi , Yuuichirou Taguma , Shinichiro Mitani
- 申请人: Takeshi Kimura , Hidefumi Ito , Hiroyuki Kojima , Nobuhiro Konishi , Yuuichirou Taguma , Shinichiro Mitani
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-129135 19960425
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/304 ; H01L21/3105 ; H01L21/321 ; H01L29/78 ; H01L21/302
摘要:
A method of manufacturing a semiconductor integrated circuit wherein a patterned wafer polishing machine for uniformly polishing a surface by chemical mechanical polishing is utilized which is provided with a head for holding a wafer and rubbing it on an abrasive surface. A pressure plate provided with vents is held by the head body which is provided with a gas inlet and an elastic film for sealing vents is provided on the end face on the side reverse to the gas inlet side of the pressure plate. A patterned wafer is held by the head as the wafer, pressed by action of the pressure of air from the gas inlet via the elastic film is pressed mechanically by the pressure plate. The polishing surface which is a principal plane on the patterned side of the wafer is mechanochemically polished by the abrasive surface.
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